5秒后页面跳转
71342LA20PFG PDF预览

71342LA20PFG

更新时间: 2024-01-16 23:47:17
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
14页 318K
描述
HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM

71342LA20PFG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TQFP
包装说明:LQFP, QFP64,.66SQ,32针数:64
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.38
Samacsys Description:TQFP 14.0 X 14.0 X 1.4 MM最长访问时间:20 ns
其他特性:SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUPI/O 类型:COMMON
JESD-30 代码:S-PQFP-G64JESD-609代码:e3
长度:14 mm内存密度:32768 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端口数量:2端子数量:64
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装等效代码:QFP64,.66SQ,32
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.0015 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.24 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.8 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

71342LA20PFG 数据手册

 浏览型号71342LA20PFG的Datasheet PDF文件第1页浏览型号71342LA20PFG的Datasheet PDF文件第2页浏览型号71342LA20PFG的Datasheet PDF文件第3页浏览型号71342LA20PFG的Datasheet PDF文件第5页浏览型号71342LA20PFG的Datasheet PDF文件第6页浏览型号71342LA20PFG的Datasheet PDF文件第7页 
IDT71342SA/LA  
High-Speed 4K x 8 Dual-Port Static RAM with Semaphore  
Industrial and Commercial Temperature Ranges  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range(1) (VCC = 5.0V ± 10%)  
71342X20  
71342X25  
Com'l & Ind  
71342X35  
Com'l Only  
Com'l Only  
Symbol  
Parameter  
Test Condition  
Version  
COM'L  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Unit  
ICC  
Dynamic Operating Current  
(Both Ports Active)  
SA  
LA  
170  
170  
280  
240  
160  
160  
280  
240  
150  
150  
260  
200  
mA  
CE = VIL  
,
Outputs Disabled  
SEM = Don't Care  
____  
____  
____  
____  
(3)  
IND  
SA  
LA  
160  
160  
310  
260  
150  
150  
300  
250  
f = fMAX  
I
SB1  
Standby Current  
(Both Ports - TTL  
Level Inputs)  
COM'L  
IND  
SA  
LA  
25  
25  
80  
80  
25  
25  
80  
50  
25  
25  
75  
45  
mA  
mA  
mA  
mA  
CE  
SEM  
f = fMAX  
L
and CE  
R
= VIH  
L
= SEMR > VIH  
(3)  
____  
____  
____  
____  
SA  
LA  
25  
25  
100  
80  
25  
25  
75  
55  
ISB2  
Standby Current  
(One Port - TTL  
Level Inputs)  
COM'L  
IND  
SA  
LA  
105  
105  
180  
150  
95  
95  
180  
150  
85  
85  
170  
140  
CE"A" = VIL and CE"B" = VIH  
Active Port Outputs Disabled,  
(3)  
f=fMAX  
____  
____  
____  
____  
SA  
LA  
95  
95  
210  
170  
85  
85  
200  
160  
ISB3  
Full Standby Current (Both  
Ports -  
CMOS Level Inputs)  
Both Ports CE  
CE > VCC - 0.2V,  
IN > VCC - 0.2V or VIN < 0.2V  
SEM = SEM > VCC - 0.2V  
f = 0(3)  
L
and  
COM'L  
IND  
SA  
LA  
1.0  
0.2  
15  
4.5  
1.0  
0.2  
15  
4.0  
1.0  
0.2  
15  
4.0  
R
V
____  
____  
____  
____  
SA  
LA  
1.0  
0.2  
30  
10  
1.0  
0.2  
30  
10  
L
R
ISB4  
Full Standby Current  
(One Port -  
CMOS Level Inputs)  
One Port CE"A" or  
CE"B" > VCC - 0.2V  
COM'L  
IND  
SA  
LA  
105  
105  
170  
130  
95  
95  
170  
120  
85  
85  
150  
110  
VIN > VCC - 0.2V or VIN < 0.2V  
____  
____  
____  
____  
SA  
LA  
95  
95  
210  
190  
85  
85  
190  
130  
SEM  
L
= SEMR > VCC - 0.2V  
Active Port Outputs Disabled,  
(3)  
f = fMAX  
2721 tbl 06a  
71342X45  
Com'l Only  
71342X55  
Com'l Only  
71342X70  
Com'l Only  
Symbol  
Parameter  
Test Condition  
Version  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Typ.(2)  
Max.  
Unit  
ICC  
Dynamic Operating Current  
(Both Ports Active)  
COM'L  
SA  
LA  
140  
140  
240  
200  
140  
140  
240  
200  
140  
140  
240  
200  
mA  
CE = VIL  
,
Outputs Disabled  
SEM = Don't Care  
____  
____  
____  
____  
____  
____  
____  
____  
(3)  
IND  
SA  
LA  
140  
140  
270  
220  
f = fMAX  
I
SB1  
Standby Current  
(Both Ports - TTL  
Level Inputs)  
COM'L  
IND  
SA  
LA  
25  
25  
70  
40  
25  
25  
70  
40  
25  
25  
70  
40  
mA  
mA  
mA  
mA  
CE  
SEM  
f = fMAX  
L
and CE  
R
= VIH  
L
= SEM  
R > VIH  
(3)  
____  
____  
____  
____  
____  
____  
____  
____  
SA  
LA  
25  
25  
70  
50  
ISB2  
Standby Current  
(One Port - TTL  
Level Inputs)  
COM'L  
IND  
SA  
LA  
75  
75  
160  
130  
75  
75  
160  
130  
75  
75  
160  
130  
CE"A" = VIL and CE"B" = VIH  
Active Port Outputs Disabled,  
(3)  
f=fMAX  
____  
____  
____  
____  
____  
____  
____  
____  
SA  
LA  
75  
75  
180  
150  
ISB3  
Full Standby Current (Both  
Ports -  
CMOS Level Inputs)  
Both Ports CE  
CE > VCC - 0.2V,  
IN > VCC - 0.2V or VIN < 0.2V  
SEM = SEM > VCC - 0.2  
f = 0(3)  
L and  
COM'L  
IND  
SA  
LA  
1.0  
0.2  
15  
4.0  
1.0  
0.2  
15  
4.0  
1.0  
0.2  
15  
4.0  
R
V
____  
____  
____  
____  
____  
____  
____  
____  
L
R
V
SA  
LA  
1.0  
2.0  
30  
10  
ISB4  
Full Standby Current  
(One Port -  
CMOS Level Inputs)  
One Port CE"A" or  
CE"B" > VCC - 0.2V  
COM'L  
IND  
SA  
LA  
75  
75  
150  
100  
75  
75  
150  
100  
75  
75  
150  
100  
VIN > VCC - 0.2V or VIN < 0.2V  
____  
____  
____  
____  
____  
____  
____  
____  
SEM  
L
= SEM  
R
> VCC - 0.2V  
SA  
LA  
75  
75  
170  
120  
Active Port Outputs Disabled,  
(3)  
f = fMAX  
2721 tbl 06b  
NOTES:  
1. 'X' in part number indicates power rating (SA or LA).  
2. VCC = 5V, TA = +25°C for typical, and parameters are not production tested.  
3. fMAX = 1/tRC = All inputs cycling at f = 1/tRC (except Output Enable). f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby ISB3.  
6.42  
4

与71342LA20PFG相关器件

型号 品牌 描述 获取价格 数据表
71342LA20PFG8 IDT HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM

获取价格

71342LA20PFGI IDT HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM

获取价格

71342LA20PFGI8 IDT HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM

获取价格

71342LA25JG IDT Dual-Port SRAM, 4KX8, 25ns, CMOS, PQCC52, 0.790 X 0.790 INCH, 0.170 INCH HEIGHT, GREEN, PL

获取价格

71342LA25JG8 IDT 暂无描述

获取价格

71342LA25JGI IDT HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM

获取价格