Datasheet > 6N10G-TND-R

6N10G-TND-R

更新时间： 2022-02-26 13:37:30

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6N10G-TND-R 数据手册

6N10

Power MOSFET



TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source

Breakdown Voltage

Drain Current vs. Gate Threshold Voltage

300

250

200

150

100

250

200

150

100

80 100 120

0.5

1.5

2.5

Gate Threshold Voltage, V_TH(V)

Drain-Source Breakdown Voltage, BV_DSS(V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-486.E

www.unisonic.com.tw

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