Datasheet > 6N10G-TND-R

6N10G-TND-R

更新时间： 2022-02-26 13:37:30

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
4页	223K
描述
N-CHANNEL POWER MOSFET

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数据手册

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6N10G-TND-R 数据手册

6N10

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DS

RATINGS

100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous

Pulsed

I_D

6.5

Continuous Drain Current

I_DM

8.0

Repetitive Avalanche Energy

(Duty Cycle ≤1%)

L=0.1mH

E_AR

P_D

1.25

SOT-223

2.2

Power Dissipation

TO-252/TO-252D

Junction Temperature

Storage Temperature

T_J

+150

°C

T_STG

-55~+150

Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SOT-223

SYMBOL

RATINGS

UNIT

°C/W

100

Junction to Ambient

θ_JA

TO-252/TO-252D

SOT-223

Junction to Case

θ_JC

°C/W

TO-252/TO-252D

7.5

Note: θ_JAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal

reference is defined as the solder mounting surface of the drain pins.

θ_JCis guaranteed by design while θ_JAis determined by the user’s board deign.

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

QW-R502-486.E

www.unisonic.com.tw

123 4

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