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6ED003L06F2XUMA2 PDF预览

6ED003L06F2XUMA2

更新时间: 2024-02-25 23:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动接口集成电路
页数 文件大小 规格书
19页 663K
描述
Half Bridge Based MOSFET Driver,

6ED003L06F2XUMA2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.69接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
Base Number Matches:1

6ED003L06F2XUMA2 数据手册

 浏览型号6ED003L06F2XUMA2的Datasheet PDF文件第4页浏览型号6ED003L06F2XUMA2的Datasheet PDF文件第5页浏览型号6ED003L06F2XUMA2的Datasheet PDF文件第6页浏览型号6ED003L06F2XUMA2的Datasheet PDF文件第8页浏览型号6ED003L06F2XUMA2的Datasheet PDF文件第9页浏览型号6ED003L06F2XUMA2的Datasheet PDF文件第10页 
6ED003-F2 family  
200 V & 600 V three-phase driver with Over Current Protection, Enable and Fault  
3.7  
LO1,2,3 and HO1,2,3 (Low and High Side Outputs, Pin 14, 15, 16, 19, 23,  
27)  
Low side and high side power outputs are specifically designed for pulse operation such as gate drive of IGBT  
and MOSFET devices. Low side outputs (i.e. LO1,2,3) are state triggered by the respective inputs, while high side  
outputs (i.e. HO1,2,3) are edge triggered by the respective inputs. In particular, after an under voltage condition  
of the VBS supply, a new turn-on signal (edge) is necessary to activate the respective high side output, while  
after a under voltage condition of the VCC supply, the low side outputs switch to the state of their respective  
inputs.  
6ED003-F2 family Datasheet  
www.infineon.com/gdThreePhase  
7 of 19  
Version 2.9  
2019-03-21  
 

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