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6A4G-AP PDF预览

6A4G-AP

更新时间: 2024-02-19 08:11:36
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
4页 812K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-6, 2 PIN

6A4G-AP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC, R-6, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.12应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:400 A
元件数量:1相数:1
端子数量:2最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:400 V
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

6A4G-AP 数据手册

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6A05G  
THRU  
6A10G  
M C C  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
6 Amp Glass  
Passivated  
High Surge Current Capability  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Marking : Cathode band and type number  
·
Junction Rectifier  
50 to 1000 Volts  
High Current Operation 6.0 Ampere @ TA=60  
Glass Passivated Junction In R-6 Package  
Low Leakage  
Halogen free available upon request by adding suffix "-HF"  
R-6  
Maximum Ratings  
Operating Temperature: -55to +150℃  
Storage Temperature: -55to +150℃  
D
Maximum  
Maximum DC  
Blocking  
MCC  
Recurrent  
Maximum  
Part Number Peak Reverse RMS Voltage  
Voltage  
Voltage  
6A05G  
6A1G  
6A2G  
6A4G  
6A6G  
6A8G  
6A10G  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
A
Cathode  
Mark  
140V  
280V  
420V  
560V  
700V  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
IF(AV)  
6.0A  
TA =60℃  
Current  
C
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.0V  
10µA  
100pF  
IFM = 6.0A;  
DIMENSIONS  
TJ = 25℃  
INCHES  
MIN  
MM  
DIM  
A
MAX  
.360  
.360  
.052  
---  
MIN  
MAX  
9.10  
9.10  
1.30  
---  
NOTE  
.340  
8.60  
8.60  
B
.340  
C
D
.048  
1.20  
Typical Junction  
CJ  
Measured at  
1.000  
25.40  
Capacitance  
1.0MHz, VR=4.0V  
www.mccsemi.com  
1 of 4  
Revision: A  
2014/01/20  

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