MLCC ARRAYS
项目
技术规格
测 试 方 法
Item
Technical Specification
Test Method and Remarks
项目
Item
C0G
X7R
Y5V
将电容在 100~200℃的温度下预热 10±2 分钟.
浸锡温度: 265±5℃
浸锡时间: 10±1s
然后取出溶剂清洗干净,在 10 倍以上的显微镜底下观察.
放置时间:24±2 小时 放置条件:室温
Preheating conditions: 100 to 200℃; 10±2min.
Solder Temperature: 265±5℃
Duration: 10±1s
Clean the capacitor with solvent and examine it with a
10X(min.) microscope.
Recovery Time: 24±2h
Recovery condition: Room temperature
≤±0.5%或±0.5PF,
取较大值
≤±0.5% or ±0.5PF,
whichever is larger
同初始标准
-10 %~
+20%
ΔC/C
-5%~+10%
耐焊接热
Resistance to
Soldering
Heat
DF
IR
Same to initial value.
同初始标准
Same to initial value.
外观:无可见损伤 上锡率:≥95%
Appearance : No visible damage.At least 95% of the
terminal electrode is covered by new solder.
试验基板:Al2O3 或 PCB
施压速度:1mm/sec.
应在弯曲状态下进行测量。
弯曲深度:1mm
单位:mm
外观:无可见损伤.
Test Board: Al2O3 or PCB
Speed: 1mm/sec.
Warp: 1mm
Unit: mm
Appearance: No visible damage.
抗弯曲强度
Resistance to
Flexure of
Substrate
The measurement should be made with the board in the
bending position.
(Bending
Strength)
ΔC/C
≤±10%
预处理※(2 类):上限类别温度,1 小时 恢复:24±1h
Preheating conditions: up-category temperature, 1h
Recovery time: 24±1h
初始测量 Initial Measurement
循环次数:5 次,一个循环分以下 4 步:
Cycling Times: 5 times, 1 cycle, 4 steps:
项目
Item
C0G
X7R
Y5V
≤±1%或±1PF,取较
大值
ΔC/C
≤±10%
≤±20%
≤±1% or ±1pF,
whichever is larger
时间
阶段
Step
1
温度(Temperature)(℃)
温度循环
(Time)
Temperature
Cycle
下限温度(Low- category temp.):
NPO/X7R:-55 Y5V:-25
30min
2
3
常温(Normal temp.) : +20
2~3min
30min
上限温度(Up- category temp.):
NPO/X7R: +125
Y5V:+85
4
常温(Normal temp.) : +20
2~3min
试验后放置(恢复)时间:24±2h
Recovery time after test: 24±2h
Ⅰ类: ±7.5%或±0.75pF,取两者之中较大者
Ⅱ类: X7R: ≤±12.5% Y5V: ≤±30%
ClassⅠ: ±7.5% or ±0.75pF, whichever is larger.
ClassⅡ: B,X,BS,DS: ≤±12.5% E,F: ≤±30%
≤2 倍初始标准
温度:40±2℃
ΔC/C
湿度:90~95%RH
电压:额定电压
时间:500 小时
放置条件:室温
DF
IR
Not more than twice of initial value.
Ri≥5000MΩ或 Ri•CR≥50S 取两者之中较小者.
放置时间:24 小时(Ⅰ类);
48 小时(Ⅱ类)
Temperature: 40±2℃
Humidity: 90~95%RH
Voltage: Rated Voltage
Duration: 500h
ClassⅠ
Ri≥5000MΩ或 Ri•CR≥50S whichever is smaller.
耐湿负荷
Humidity load
Ri≥1000MΩ或 Ri•CR≥10S 取两者之中较小者.
Ri≥1000MΩ或 Ri•CR≥10S whichever is smaller.
X7R
Y5V
Clas
s
Ⅱ
Ri≥400MΩ或 Ri•CR≥10S 取两者之中较小者.
Ri≥400MΩ或 Ri•CR≥10S whichever is smaller.
Recovery conditions:
Room temperature
Recovery Time:
24h (Class1) or 48h (Class2)
外观:无损伤
Appearance: No visible damage.