Datasheet > 5R8STXV

5R8STXV

更新时间： 2024-09-27 05:33:03

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	67K
描述
Rectifier Diode, 1 Phase, 1 Element, 100A, 50V V(RRM), Silicon, DO-5,

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5R8STXV 数据手册

4R8S thru 15R8S

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

100 Amp

Part Number/Ordering Information ^1/

__ R8S __

Ultra Fast Rectifier

40-150 VOLTS*

│

└

Screening ^2/__ = Not Screened

TX = TX Level

50 nsec

TXV = TXV Level

S = S Level

Features:

•

Ultra Fast Recovery: 50 nsec Maximum

Reverse Voltage to 150 Volts

* Higher Voltages Available – Consult Factory

Very Low Forward Voltage Drop

Low Reverse Leakage Single Chip

Construction

Family/Voltage

4 = 40V

5 = 50V

7 = 70V

10 = 100V

12 = 125V

15 = 150V

•

Hermetically Sealed

TX, TXV, and S-Level Screening Available ^2/

Maximum Ratings ^3/

Symbol

Value

Units

Volts

4R8S

5R8S

7R8S

10R8S

12R8S

15R8S

100

125

150

Peak Repetitive Reverse Voltage and

DC Blocking Voltage

V_RM

V_R

Half Wave Rectified Forward Current

Averaged Over Full Cycle

100

400

Amps

(Resistive Load, 60 Hz, Sine Wave, T_A= 55 °C)

Peak Repetitive Forward Current

(T_C= 55°C, 8.3 ms Pulse, Allow Junction to Reach

Equilibrium Between Pulses)

I_FSM

Peak Surge Current

(T_C= 55°C, Superimposed on Rated Current at

Rated Voltage, 8.3 ms Pulse)

1000

I_FSM

T_OP& T_STG

R_θJC

Operating & Storage Temperature

-65 to +175

0.65

ºC

Thermal Resistance (Junction to Case)

ºC/W

Notes:

1/ For ordering information, price, operating curves, and availability- Contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all maximum ratings/electrical characteristics @ 25°C.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RU0167B

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