Datasheet > 5962F1123501VXC

5962F1123501VXC

更新时间： 2023-12-26 09:00:05

品牌	Logo	应用领域
英飞凌 - INFINEON		静态存储器
页数	文件大小	规格书
19页	958K
描述
Asynchronous SRAM

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5962F1123501VXC 数据手册

CYRS1049DV33

4-Mbit (512K × 8) Static RAM

with RadStop™ Technology

4-Mbit (512K

× 8) Static RAM with RadStop™ Technology

■ Transistor-transistor logic (TTL) compatible inputs and outputs

■ Easy memory expansion with CE and OE features

Radiation Performance

Radiation Data

■ Available in Gold plated leads 36-pin ceramic flat package

■ Total dose =300 Krad

Functional Description

■ Soft

error rate (both heavy ion and proton)

Heavy ions  1 × 10^-10upsets/bit-day with single-error

The CYRS1049DV33 is a high-performance complementary

metal oxide semiconductor (CMOS) static RAM organized as

512K words by 8 bits with RadStop™ technology. Cypress’

state-of-the-art RadStop technology is radiation hardened

through proprietary design and process hardening techniques.

The 4-Mbit fast asynchronous SRAM with RadStop technology

is also QML V certified with Defense Logistics Agency Land and

Maritime (DLAM).

correction, double error detection error detection and

correction (SEC-DED EDAC)

■ Neutron = 2.0 × 10¹⁴N/cm²

■ Dose rate > 2.0 × 10⁹(rad(Si)/s)

■ Latch up immunity LET = 120 MeV.cm²/mg (125 C)

Processing Flows

To write to the device, take Chip Enable (CE) and Write Enable

(WE) inputs LOW. Data on the eight I/O pins (I/O₀through I/O₇)

is then written into the location specified on the address pins (A₀

through A₁₈).

■ V Grade - Class V flow in compliance with MIL-PRF 38535

Prototyping Options

■ CYPT1049DV33 prototype units with same functional and

timing as flight units using non-radiation hardened die in a

36-pin ceramic flat package

To read from the device, take Chip Enable (CE) and Output

Enable (OE) LOW while forcing the Write Enable (WE) HIGH.

Under these conditions, the contents of the memory location

specified by the address pins appear on the I/O pins. See the

Truth Table on page 12 for a complete description of read and

write modes.

Features

■ Temperature ranges

❐ Military/Space: –55 °C to 125 °C

The eight input or output pins (I/O₀through I/O₇) are placed in a

high impedance state when the device is deselected (CE HIGH),

the outputs are disabled (OE HIGH), or during a write operation

(CE LOW, and WE LOW)

■ High speed

❐ t_AA= 12 ns

■ Low active power

❐ I_CC= 95 mA at 12 ns (P_MAX= 315 mW)

The CYRS1049DV33 is available in a ceramic 36-pin Flat

package with center power and ground (revolutionary) pinout.

■ Low CMOS standby power

❐ I_SB2= 15 mA

Easy memory expansion is provided by utilizing OE, CE, and

tri-state drivers.

■ 2.0 V data retention

For a complete list of related documentation, click here.

■ Automatic power-down when deselected

Selection Guide

Description

Maximum access time

Military/Space

Unit

Maximum operating current

Maximum CMOS standby current

Cypress Semiconductor Corporation

Document Number: 001-64292 Rev. *J

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised June 13, 2019

123 4 5 6 7...19

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