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5962-9669105HZX PDF预览

5962-9669105HZX

更新时间: 2022-12-01 19:25:38
品牌 Logo 应用领域
美高森美 - MICROSEMI 静态存储器
页数 文件大小 规格书
10页 208K
描述
Standard SRAM, 128KX8, 55ns, CMOS, CDSO36, CERAMIC, SOJ-36

5962-9669105HZX 数据手册

 浏览型号5962-9669105HZX的Datasheet PDF文件第1页浏览型号5962-9669105HZX的Datasheet PDF文件第3页浏览型号5962-9669105HZX的Datasheet PDF文件第4页浏览型号5962-9669105HZX的Datasheet PDF文件第5页浏览型号5962-9669105HZX的Datasheet PDF文件第6页浏览型号5962-9669105HZX的Datasheet PDF文件第7页 
WMS128K8-XXX  
ABSOLUTE MAXIMUM RATINGS  
TRUTH TABLE  
Parameter  
Symbol  
TA  
Min  
-55  
-65  
-0.5  
Max  
+125  
+150  
Vcc+0.5  
150  
Unit  
°C  
°C  
V
CS  
H
L
L
L
OE  
X
L
X
H
WE  
X
H
L
H
Mode  
Standby  
Read  
Write  
Out Disable  
Data I/O  
High Z  
Data Out  
Data In  
High Z  
Power  
Standby  
Active  
Active  
Active  
Operating Temperature  
Storage Temperature  
Signal Voltage Relative to GND  
Junction Temperature  
Supply Voltage  
TSTG  
VG  
TJ  
°C  
V
VCC  
-0.5  
7.0  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Symbol  
VCC  
Min  
4.5  
Max  
5.5  
Unit  
V
Supply Voltage  
Input High Voltage  
Input Low Voltage  
Operating Temp. (Mil.)  
VIH  
2.2  
VCC + 0.3  
+0.8  
V
VIL  
-0.3  
-55  
V
TA  
+125  
°C  
CAPACITANCE  
(TA = +25°C)  
Parameter  
Symbol  
Condition  
Package  
Speed (ns)  
Max  
Unit  
Input capacitance  
CIN  
V
IN = 0V, f = 1.0MHz  
32 Pin CSOJ, DIP,  
15 to 55  
20  
pF  
Flat Pack Evolutionary  
36 Pin CSOJ, Flat Pack and  
32 Pin CSOJ Revolutionary  
15 to 25  
35 to 55  
12  
20  
pF  
pF  
Output capicitance  
COUT  
V
OUT = 0V, f = 1.0MHz  
32 Pin CSOJ, DIP,  
15 to 55  
20  
pF  
Flat Pack Evolutionary  
36 Pin CSOJ, Flat Pack and  
32 Pin CSOJ Revolutionary  
15 to 25  
35 to 55  
12  
20  
pF  
pF  
32 Pin CLCC  
15 to 55  
15  
pF  
This parameter is guaranteed by design but not tested.  
DC CHARACTERISTICS  
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)  
Parameter  
Sym  
Conditions  
-15  
Max  
-17  
Min Max  
-20  
Min Max  
-25  
Min Max  
Units  
Min  
Input Leakage Current  
Output Leakage Current  
Operating Supply Current  
Standby Current  
ILI  
ILO  
ICC  
ISB  
VOL  
VOH  
VCC = 5.5, VIN = GND to VCC  
10  
10  
10  
10  
10  
10  
µA  
µA  
mA  
mA  
V
CS = VIH, OE = VIH, VOUT = GND to VCC  
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5  
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5  
IOL = 8mA, VCC = 4.5  
10  
10  
150  
20  
150  
150  
150  
15  
20  
0.4  
20  
0.4  
Output Low Voltage  
Output High Voltage  
0.4  
0.4  
IOH = -4.0mA, VCC = 4.5  
2.4  
2.4  
2.4  
2.4  
V
Parameter  
Sym  
Conditions  
-35  
-45  
-55  
Units  
Min  
Max  
Min  
Max  
Min  
Max  
Input Leakage Current  
Output Leakage Current  
Operating Supply Current  
Standby Current  
ILI  
ILO  
VCC = 5.5, VIN = GND to VCC  
10  
10  
10  
10  
10  
µA  
µA  
mA  
mA  
V
CS = VIH, OE = VIH, VOUT = GND to VCC  
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5  
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5  
IOL = 2.1mA, VCC = 4.5  
10  
150  
15  
ICC  
150  
15  
150  
15  
ISB  
Output Low Voltage  
Output High Voltage  
VOL  
VOH  
0.4  
0.4  
0.4  
IOH = -1.0mA, VCC = 4.5  
2.4  
2.4  
2.4  
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
2

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