5秒后页面跳转
5962-9461114HXX PDF预览

5962-9461114HXX

更新时间: 2024-01-12 10:13:50
品牌 Logo 应用领域
WEDC 静态存储器内存集成电路
页数 文件大小 规格书
40页 287K
描述
Standard SRAM, 32KX8, 70ns, CMOS, CQCC28,

5962-9461114HXX 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:70 nsJESD-609代码:e0
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:32KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形式:CHIP CARRIER并行/串行:PARALLEL
认证状态:Not Qualified最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
技术:CMOS温度等级:MILITARY
端子面层:TIN LEAD端子位置:QUAD
Base Number Matches:1

5962-9461114HXX 数据手册

 浏览型号5962-9461114HXX的Datasheet PDF文件第2页浏览型号5962-9461114HXX的Datasheet PDF文件第3页浏览型号5962-9461114HXX的Datasheet PDF文件第4页浏览型号5962-9461114HXX的Datasheet PDF文件第5页浏览型号5962-9461114HXX的Datasheet PDF文件第6页浏览型号5962-9461114HXX的Datasheet PDF文件第7页 
REVISIONS  
LTR  
F
DESCRIPTION  
DATE (YR-MO-DA)  
99-04-22  
APPROVED  
Figure 1; changed case outline M to be available in either a single or  
dual cavity package. Added vendor CAGE code 0EU86 for device  
types 05 through 10. -sld  
K. A. Cottongim  
G
H
Added device types 11 through 16.  
99-08-18  
00-04-06  
Raymond Monnin  
Raymond Monnin  
Add note to paragraph 1.2.2 and table I, conditions. Add thermal  
resistance, junction-to-case (θJC) for all case outlines. Add case  
outline 9.  
J
Table I, ICC change maximum limits and ISB change maximum limits.  
Figure 1, case outline M, correct diagram adding "c" dimension, lead  
thickness and change dimension A2 maximum from 0.020" to 0.025".  
00-06-19  
Raymond Monnin  
K
L
Figure 1, case outline 9, minimum dimension for D2/E2, change  
0.990 inches to 0.980 inches and 25.15 mm to 24.89 mm.  
01-5-16  
Raymond Monnin  
Raymond Monnin  
Table I; Operating supply current (ICC) changed the maximum limit for  
device types 9 and 15 at f = 50 MHz from 700 mA to 725 mA and for  
device types 10 and 16 at f = 58.8 MHz from 700 mA to 750 mA. -sld  
01-12-21  
M
N
P
Added device types 17 through 20. -sld  
Added case outline A. -sld  
02-11-18  
03-02-24  
03-12-19  
04-05-03  
Raymond Monnin  
Raymond Monnin  
Raymond Monnin  
Raymond Monnin  
Added case outline B. Added note to paragraph 1.2.4. -sld  
R
Table I; Changed the IOL from 8 mA to 6 mA for device types 07-10  
and 13 -20 for the VOL test. Editorial changes throughout. -sld  
REV  
SHEET  
REV  
R
R
R
R
R
R
R
21  
R
R
22  
R
R
23  
R
R
24  
R
R
25  
R
R
26  
R
R
27  
R
R
28  
R
R
29  
R
R
30  
R
R
SHEET  
15  
16  
17  
18  
19  
20  
31  
R
REV STATUS  
OF SHEETS  
REV  
R
R
R
SHEET  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
PMIC N/A  
PREPARED BY  
Gary Zahn  
DEFENSE SUPPLY CENTER COLUMBUS  
STANDARD  
MICROCIRCUIT  
DRAWING  
CHECKED BY  
Michael C. Jones  
COLUMBUS, OHIO 43216  
http://www.dscc.dla.mil  
THIS DRAWING IS  
AVAILABLE  
FOR USE BY ALL  
DEPARTMENTS  
APPROVED BY  
Kendall A. Cottongim  
MICROCIRCUIT, HYBRID, MEMORY,  
DIGITAL, 512K x 32-BIT, STATIC RANDOM  
ACCESS MEMORY, CMOS  
AND AGENCIES OF THE  
DEPARTMENT OF DEFENSE  
DRAWING APPROVAL DATE  
95-11-13  
AMSC N/A  
REVISION LEVEL  
SIZE  
A
CAGE CODE  
67268  
R
5962-94611  
SHEET  
1 OF 31  
DSCC FORM 2233  
APR 97  
5962-E251-04  

与5962-9461114HXX相关器件

型号 品牌 获取价格 描述 数据表
5962-9461114HYC ETC

获取价格

x32 SRAM Module
5962-9461114HYX WEDC

获取价格

SRAM Module, 512KX32, 25ns, CMOS, CQFP68, CERAMIC, QFP-68
5962-9461115H9A WEDC

获取价格

SRAM Module, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68
5962-9461115H9C WEDC

获取价格

SRAM Module, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68
5962-9461115HMA ETC

获取价格

x32 SRAM Module
5962-9461115HMC ETC

获取价格

x32 SRAM Module
5962-9461115HMX MICROSS

获取价格

SRAM Module, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68
5962-9461115HTA MICROSEMI

获取价格

SRAM Module, 512KX32, 20ns, CMOS, CPGA66, PGA-66
5962-9461115HTC MICROSEMI

获取价格

SRAM Module, 512KX32, 20ns, CMOS, CPGA66, PGA-66
5962-9461115HTX MICROSS

获取价格

SRAM Module, 512KX32, 20ns, CMOS, CPGA66, PGA-66