5秒后页面跳转
5962-9305606MXX PDF预览

5962-9305606MXX

更新时间: 2024-02-29 13:35:01
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器
页数 文件大小 规格书
12页 335K
描述
8K X 8 nvSRAM QuantumTrap CMOS Nonvolatile Static RAM

5962-9305606MXX 技术参数

生命周期:Obsolete零件包装代码:QLCC
包装说明:QCCN,针数:28
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.84
Is Samacsys:N最长访问时间:35 ns
其他特性:RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALLJESD-30 代码:R-CQCC-N28
长度:13.97 mm内存密度:65536 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
功能数量:1端口数量:1
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:8KX8输出特性:3-STATE
可输出:YES封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QCCN封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:2.29 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:NO LEAD
端子节距:1.27 mm端子位置:QUAD
宽度:8.89 mmBase Number Matches:1

5962-9305606MXX 数据手册

 浏览型号5962-9305606MXX的Datasheet PDF文件第3页浏览型号5962-9305606MXX的Datasheet PDF文件第4页浏览型号5962-9305606MXX的Datasheet PDF文件第5页浏览型号5962-9305606MXX的Datasheet PDF文件第7页浏览型号5962-9305606MXX的Datasheet PDF文件第8页浏览型号5962-9305606MXX的Datasheet PDF文件第9页 
STK10C68  
MODE SELECTION  
E
H
L
L
L
L
W
X
H
L
G
X
L
NE  
X
MODE  
POWER  
Standby  
Active  
Not Selected  
H
H
L
Read SRAM  
X
L
Write SRAM  
Active  
l
H
L
Nonvolatile RECALL  
Nonvolatile STORE  
Active  
H
L
I
CC  
2
L
L
L
H
L
H
L
X
No Operation  
Active  
Note l: An automatic RECALL takes place at power up, starting when VCC exceeds 4.25V and taking tRESTORE  
.
STORE CYCLES #1 & #2  
(VCC = 5.0V ± 10%)  
SYMBOLS  
NO.  
PARAMETER  
MIN  
MAX  
UNITS  
#1  
#2  
Alt.  
m
n
26  
27  
28  
29  
30  
31  
32  
t
t
t
t
t
t
STORE Cycle Time  
10  
ms  
ns  
ns  
ns  
ns  
ns  
ns  
WLQX  
WLNH  
ELQX  
ELNH  
STORE  
WC  
STORE Initiation Cycle Time  
Output Disable Set-up to NE Fall  
Output Disable Set-up to E Fall  
NE Set-up  
20  
0
tGHNL  
t
t
0
GHEL  
NLEL  
t
t
0
NLWL  
ELWL  
Chip Enable Set-up  
0
t
Write Enable Set-up  
0
WLEL  
Note m: Measured with W and NE both returned high, and G returned low. STORE cycles are inhibited below 4.0V.  
Note n: Once tWC has been satisfied by NE, G, W and E, the STORE cycle is completed automatically. Any of NE, G, W or E may be used to terminate  
the STORE initiation cycle.  
Note o: If E is low for any period of time in which W is high while G and NE are low, then a RECALL cycle may be initiated.  
STORE CYCLE #1: W Controlledo  
NE  
28  
30  
27  
G
t
t
t
GHNL  
NLWL  
WLNH  
W
31  
t
ELWL  
E
26  
t
WLQX  
HIGH IMPEDANCE  
DQ (DATA OUT)  
STORE CYCLE #2: E Controlledo  
30  
t
NLEL  
NE  
29  
t
GHEL  
G
32  
t
WLEL  
W
E
27  
t
ELNH  
26  
t
ELQX  
HIGH IMPEDANCE  
DQ (DATA OUT)  
September 2003  
6
Document Control # ML0006 rev 0.1  
 
 
 
 
 

与5962-9305606MXX相关器件

型号 品牌 描述 获取价格 数据表
5962-9305606MYA ETC 8K X 8 nvSRAM QuantumTrap CMOS Nonvolatile Static RAM

获取价格

5962-9305606MYC SIMTEK Non-Volatile SRAM, 8KX8, 35ns, CMOS, CQCC28, CERAMIC, LCC-28

获取价格

5962-9305606MYX ETC 8K X 8 nvSRAM QuantumTrap CMOS Nonvolatile Static RAM

获取价格

5962-9305701MPX ETC Single-Ended or Diff Data Acquisition System

获取价格

5962-9305702MPA WEDC ADC, Successive Approximation, 12-Bit, 1 Func, 1 Channel, Parallel, Word Access, CERAMIC,

获取价格

5962-9305702MPX ETC Analog-to-Digital Converter, 12-Bit

获取价格