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5962-9089912MYX PDF预览

5962-9089912MYX

更新时间: 2024-02-18 14:10:19
品牌 Logo 应用领域
其他 - ETC 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
27页 208K
描述
MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

5962-9089912MYX 技术参数

生命周期:Active零件包装代码:QFJ
包装说明:QCCN,针数:32
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.8
Is Samacsys:N最长访问时间:150 ns
JESD-30 代码:R-CQCC-N32JESD-609代码:e0
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QCCN封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
编程电压:12 V认证状态:Qualified
筛选级别:MIL-PRF-38535 Class Q最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:TIN LEAD
端子形式:NO LEAD端子位置:QUAD
Base Number Matches:1

5962-9089912MYX 数据手册

 浏览型号5962-9089912MYX的Datasheet PDF文件第3页浏览型号5962-9089912MYX的Datasheet PDF文件第4页浏览型号5962-9089912MYX的Datasheet PDF文件第5页浏览型号5962-9089912MYX的Datasheet PDF文件第7页浏览型号5962-9089912MYX的Datasheet PDF文件第8页浏览型号5962-9089912MYX的Datasheet PDF文件第9页 
TABLE I. Electrical performance characteristics.  
Test  
Symbol  
Conditions  
+125 C 1/  
5.5 V  
unless otherwise specified  
Group A  
Subgroups  
Device  
type  
Limits  
Units  
-55 C  
4.5 V  
T
C
V
CC  
Min  
Max  
DC CHARACTERISTICS  
Input leakage  
current  
I
V
= V  
CC CC  
max,  
max or V  
1, 2, 3  
1, 2, 3  
All  
All  
±1.0  
±10  
µA  
µA  
LI  
V
= V  
CC  
IN  
SS  
Output leakage  
current  
I
V
V
= V  
= V  
max,  
max or V  
LO  
CC  
OUT  
CC  
CC  
SS  
V
standby  
I
I
I
V
= V  
CC  
max, CE = V  
1, 2, 3  
1, 2, 3  
1, 2, 3  
All  
All  
All  
1.0  
100  
30  
mA  
µA  
CC  
current (TTL)  
CCS1  
CCS2  
CC1  
CC  
IH  
V
standby  
CE = V  
±0.2 V,  
max  
CC  
current (CMOS)  
CC  
= V  
V
CC  
CC  
V
active read  
V
I
= V  
CC  
max, CE = V  
mA  
CC  
current  
CC  
OUT  
IL  
= 0 mA, f = 6.0 MHz,  
OE = V  
IH  
V
programming  
I
I
I
CE = V , programming in  
IL  
1, 2, 3  
1, 2, 3  
1, 2, 3  
All  
All  
All  
30 2/  
30 2/  
±10  
mA  
mA  
µA  
CC  
current  
CC2  
CC3  
PPS  
progress  
V
erase  
CE = V , erasure in progress  
IL  
CC  
current  
V
standby  
V
= V  
PP  
current  
PP  
PPL  
V
read current  
I
V
V
= V  
= V  
1, 2, 3  
All  
All  
200  
±10  
µA  
PP  
PP1  
PP  
PPH  
PP  
PPL  
V
programming  
I
V
= V  
, programming in  
1, 2, 3  
30 2/  
mA  
PP  
PP2  
PP  
PPH  
current  
progress  
See footnotes at end of table.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-90899  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
C
SHEET  
6
DSCC FORM 2234  
APR 97  

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