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5962-9089911QUA PDF预览

5962-9089911QUA

更新时间: 2024-02-06 07:12:21
品牌 Logo 应用领域
其他 - ETC 闪存内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
27页 208K
描述
MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

5962-9089911QUA 技术参数

生命周期:Active零件包装代码:QFJ
包装说明:QCCN, LCC32,.45X.55针数:32
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.58
Is Samacsys:N最长访问时间:200 ns
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-CQCC-N32JESD-609代码:e0
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QCCN封装等效代码:LCC32,.45X.55
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL电源:5 V
编程电压:12 V认证状态:Qualified
筛选级别:MIL-PRF-38535 Class Q最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:TIN LEAD端子形式:NO LEAD
端子节距:1.27 mm端子位置:QUAD
切换位:YES类型:NOR TYPE
Base Number Matches:1

5962-9089911QUA 数据手册

 浏览型号5962-9089911QUA的Datasheet PDF文件第3页浏览型号5962-9089911QUA的Datasheet PDF文件第4页浏览型号5962-9089911QUA的Datasheet PDF文件第5页浏览型号5962-9089911QUA的Datasheet PDF文件第7页浏览型号5962-9089911QUA的Datasheet PDF文件第8页浏览型号5962-9089911QUA的Datasheet PDF文件第9页 
TABLE I. Electrical performance characteristics.  
Test  
Symbol  
Conditions  
+125 C 1/  
5.5 V  
unless otherwise specified  
Group A  
Subgroups  
Device  
type  
Limits  
Units  
-55 C  
4.5 V  
T
C
V
CC  
Min  
Max  
DC CHARACTERISTICS  
Input leakage  
current  
I
V
= V  
CC CC  
max,  
max or V  
1, 2, 3  
1, 2, 3  
All  
All  
±1.0  
±10  
µA  
µA  
LI  
V
= V  
CC  
IN  
SS  
Output leakage  
current  
I
V
V
= V  
= V  
max,  
max or V  
LO  
CC  
OUT  
CC  
CC  
SS  
V
standby  
I
I
I
V
= V  
CC  
max, CE = V  
1, 2, 3  
1, 2, 3  
1, 2, 3  
All  
All  
All  
1.0  
100  
30  
mA  
µA  
CC  
current (TTL)  
CCS1  
CCS2  
CC1  
CC  
IH  
V
standby  
CE = V  
±0.2 V,  
max  
CC  
current (CMOS)  
CC  
= V  
V
CC  
CC  
V
active read  
V
I
= V  
CC  
max, CE = V  
mA  
CC  
current  
CC  
OUT  
IL  
= 0 mA, f = 6.0 MHz,  
OE = V  
IH  
V
programming  
I
I
I
CE = V , programming in  
IL  
1, 2, 3  
1, 2, 3  
1, 2, 3  
All  
All  
All  
30 2/  
30 2/  
±10  
mA  
mA  
µA  
CC  
current  
CC2  
CC3  
PPS  
progress  
V
erase  
CE = V , erasure in progress  
IL  
CC  
current  
V
standby  
V
= V  
PP  
current  
PP  
PPL  
V
read current  
I
V
V
= V  
= V  
1, 2, 3  
All  
All  
200  
±10  
µA  
PP  
PP1  
PP  
PPH  
PP  
PPL  
V
programming  
I
V
= V  
, programming in  
1, 2, 3  
30 2/  
mA  
PP  
PP2  
PP  
PPH  
current  
progress  
See footnotes at end of table.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-90899  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
C
SHEET  
6
DSCC FORM 2234  
APR 97  

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