5秒后页面跳转
5962-9089909MZX PDF预览

5962-9089909MZX

更新时间: 2024-02-26 14:42:17
品牌 Logo 应用领域
其他 - ETC 闪存内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
27页 208K
描述
MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

5962-9089909MZX 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:QFP,针数:32
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.74
Is Samacsys:N最长访问时间:90 ns
JESD-30 代码:R-CQFP-G32长度:13.97 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QFP封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
编程电压:12 V认证状态:Not Qualified
筛选级别:MIL-STD-883座面最大高度:4.04 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:GULL WING端子节距:1.27 mm
端子位置:QUAD宽度:11.43 mm
Base Number Matches:1

5962-9089909MZX 数据手册

 浏览型号5962-9089909MZX的Datasheet PDF文件第1页浏览型号5962-9089909MZX的Datasheet PDF文件第2页浏览型号5962-9089909MZX的Datasheet PDF文件第4页浏览型号5962-9089909MZX的Datasheet PDF文件第5页浏览型号5962-9089909MZX的Datasheet PDF文件第6页浏览型号5962-9089909MZX的Datasheet PDF文件第7页 
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix  
A for device class M.  
1.3 Absolute maximum ratings. 1/  
Endurance:  
Device types 01-04, 09 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 cycles/byte, minimum  
Device types 05-08 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1,000 cycles/byte, minimum  
Device types 10-13 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100,000 cycles/byte, minimum  
Supply voltage range (V ) 2/ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0 V dc to +7.0 V dc  
CC  
Storage temperature range (T ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 C to +150 C  
stg  
Maximum power dissipation (P ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W  
D
Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . +300 C  
Junction temperature (T ) 3/ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150 C  
J
Thermal resistance, junction-to-case (  
Thermal resistance, junction-to-case (  
Thermal resistance, junction-to-case (  
) (case outline X, Y) . . . . . . See MIL-STD-1835  
) (case outlines T, Z) . . . . . . 13 C/W  
) (case outline U) . . . . . . . . . 27 C/W  
JC  
JC  
JC  
Voltage on any pin with respect to ground 2/ . . . . . . . . . . . . . . . . . . . . . -2.0 V dc to +7.0 V dc  
Voltage on pin A with respect to ground 4/ . . . . . . . . . . . . . . . . . . . . . -2.0 V dc to +13.5 V dc  
9
V
V
supply voltage with respect to ground 4/ . . . . . . . . . . . . . . . . . . . . -2.0 V dc to +14.0 V dc  
supply voltage with respect to ground 2/ . . . . . . . . . . . . . . . . . . . . -2.0 V dc to +7.0 V dc  
PP  
CC  
Output short circuit current 5/ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA  
Data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 years minimum  
1.4 Recommended operating conditions. 6/  
Supply voltage range (V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5 V dc to +5.5 V dc  
CC  
Operating temperature range (T  
Low level input voltage range (V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 V dc to +0.8 V dc  
High level input voltage range (V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.0 V dc to V  
High level input voltage range, CMOS (V ) . . . . . . . . . . . . . . . . . . . . . . V  
) . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 C to +125 C  
case  
IL  
IH  
+0.5 V dc  
CC  
-0.5 V dc to V  
+0.5 V dc  
IH  
CC  
CC  
Chip clear (V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4 V dc to 12.6 V dc  
P
1.5 Digital logic testing for device classes Q and V.  
Fault coverage measurement of manufacturing  
logic tests (MIL-STD-883, test method 5012) . . . . . . . . . . . . . . . . . . . . 100 percent  
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the  
maximum levels may degrade performance and affect reliability.  
2/ Minimum dc voltage on input or V pins is -0.5 V. During voltage transitions, inputs may overshoot V  
to -2.0 V for  
O
SS  
periods of up to 20 ns. Maximum dc voltage on output and V pins is V  
+0.5 V. During voltage transitions outputs  
O
CC  
may overshoot to V  
+2.0 V for periods up to 20 ns.  
CC  
3/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in  
accordance with method 5004 of MIL-STD-883.  
4/ Minimum dc input voltage on A or V  
may overshoot to +14.0 V for periods less than 20 ns.  
9
PP  
5/ No more than one output shorted at a time. Duration of short circuit should not be greater than 1 second.  
6/ All voltages are referenced to V (ground).  
SS  
SIZE  
STANDARD  
5962-90899  
A
MICROCIRCUIT DRAWING  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
C
SHEET  
3
DSCC FORM 2234  
APR 97  

与5962-9089909MZX相关器件

型号 品牌 描述 获取价格 数据表
5962-9089910MXA ETC x8 Flash EEPROM

获取价格

5962-9089910MXX ETC MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

获取价格

5962-9089910MYA ETC x8 Flash EEPROM

获取价格

5962-9089910MYX ETC MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

获取价格

5962-9089910QUA ETC MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

获取价格

5962-9089910QXA ETC MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON

获取价格