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5962-8959815MZA PDF预览

5962-8959815MZA

更新时间: 2024-10-02 20:21:19
品牌 Logo 应用领域
TEMIC 静态存储器内存集成电路
页数 文件大小 规格书
89页 343K
描述
Standard SRAM, 128KX8, 85ns, CMOS, CDIP32,

5962-8959815MZA 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.86
最长访问时间:85 nsI/O 类型:COMMON
JESD-30 代码:R-XDIP-T32JESD-609代码:e0
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:128KX8
输出特性:3-STATE封装主体材料:CERAMIC
封装代码:DIP封装等效代码:DIP32,.4
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified筛选级别:38535Q/M;38534H;883B
最大待机电流:0.001 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.11 mA
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb) - hot dipped端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
Base Number Matches:1

5962-8959815MZA 数据手册

 浏览型号5962-8959815MZA的Datasheet PDF文件第2页浏览型号5962-8959815MZA的Datasheet PDF文件第3页浏览型号5962-8959815MZA的Datasheet PDF文件第4页浏览型号5962-8959815MZA的Datasheet PDF文件第5页浏览型号5962-8959815MZA的Datasheet PDF文件第6页浏览型号5962-8959815MZA的Datasheet PDF文件第7页 
REVISIONS  
LTR  
F
DESCRIPTION  
DATE (YR-MO-DA)  
94-12-08  
APPROVED  
M. A. Frye  
Changes in accordance with NOR 5962-R040-95.  
Redrawn with changes. Add device types 39 and 40. Add vendor  
CAGE 66301 and 0EU86 as sources of supply for device types 39  
and 40. Add case 7. Add vendor CAGE 0EU86 as source of supply  
for case 7. Convert document to updated SMD boilerplate. Editorial  
changes throughout.  
96-03-20  
M. A. Frye  
G
H
Add device type 41. Make corrections to case outline N, dimension b.  
Add vendor CAGE 65786 as source of supply for device type 41.  
Update boilerplate. Editorial changes throughout.  
97-03-26  
Raymond Monnin  
Add device types 42, 43, 44, 45, and 46. Editorial changes to pages  
1, 3, 7-15. Update boilerplate. ksr  
98-03-03  
00-03-01  
Raymond Monnin  
Raymond Monnin  
J
K
L
Added provisions to accommodate radiation-hardened devices.  
Added device type 47 to drawing. glg  
Corrected case outline 8 Figure 1 to show correct numbering of  
terminals. Corrected Figure 2 Terminal connections. Corrected the  
case outline Y Figure 1 to show the proper distance of E and E1.  
Added note to Case outline Y Figure 1, to allow for bottom brazed  
package as an alternative style to the side brazed package . Update  
boilerplate. Editorial changes throughout. ksr  
00-12-08  
Raymond Monnin  
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REV STATUS  
OF SHEETS  
SHEET  
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PREPARED BY  
Kenneth S. Rice  
PMIC N/A  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216  
STANDARD  
MICROCIRCUIT  
DRAWING  
http://www.dscc.dla.mil  
CHECKED BY  
Raymond Monnin  
THIS DRAWING IS  
AVAILABLE  
FOR USE BY ALL  
DEPARTMENTS  
APPROVED BY  
Michael A. Frye  
MICROCIRCUIT, MEMORY, DIGITAL,  
CMOS, 128K X 8 STATIC RANDOM  
ACCESS MEMORY (SRAM) LOW POWER,  
MONOLITHIC SILICON  
AND AGENCIES OF THE  
DEPARTMENT OF DEFENSE  
DRAWING APPROVAL DATE  
89-04-21  
SIZE  
AMSC N/A  
REVISION LEVEL  
L
CAGE CODE  
5962-89598  
A
67264  
SHEET  
1 OF 52  
DSCC FORM 2233  
APR 97  
5962-E233-00  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  

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