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5962-3826703QWM PDF预览

5962-3826703QWM

更新时间: 2024-01-16 15:54:37
品牌 Logo 应用领域
麦斯威 - MAXWELL 存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
40页 315K
描述
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON

5962-3826703QWM 技术参数

生命周期:Obsolete零件包装代码:DFP
包装说明:DFP,针数:32
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.04
Is Samacsys:N最长访问时间:200 ns
其他特性:100 YEAR DATA RETENTION数据保留时间-最小值:100
JESD-30 代码:R-CDFP-F32长度:20.828 mm
内存密度:1048576 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DFP封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
编程电压:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883座面最大高度:3.1242 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:FLAT端子节距:1.27 mm
端子位置:DUAL宽度:11.049 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

5962-3826703QWM 数据手册

 浏览型号5962-3826703QWM的Datasheet PDF文件第1页浏览型号5962-3826703QWM的Datasheet PDF文件第2页浏览型号5962-3826703QWM的Datasheet PDF文件第4页浏览型号5962-3826703QWM的Datasheet PDF文件第5页浏览型号5962-3826703QWM的Datasheet PDF文件第6页浏览型号5962-3826703QWM的Datasheet PDF文件第7页 
1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows:  
Outline letter  
Descriptive designator  
GDIP1-T32 or CDIP2-T32  
CQCC1-N44  
Terminals  
Package style  
Dual in-line  
Square chip carrier  
Flat package  
Rectangular chip carrier  
Grid array  
X
Y
Z
U
T
W
M
N
6
32  
44  
32  
32  
30  
36  
32  
32  
32  
32  
See figure 1  
CQCC1-N32  
See figure 1  
See figure 1  
See figure 1  
See figure 1  
Grid array  
Flat package  
Flat package  
Flat package  
Flat package  
See figure 1(enhanced rad tolerant)  
See figure 1(enhanced rad tolerant)  
7
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix  
A for device class M.  
1.3 Absolute maximum ratings. 1/ 2/  
Supply voltage range (V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 V dc to +6.0 V dc 3/  
CC  
Operating case temperature range . . . . . . . . . . . . . . . . . . . . . . -55 C to +125 C  
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 C to +150 C  
Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . +300 C  
Thermal resistance, junction-to-case (  
):  
JC  
Cases X, Y and U . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See MIL-STD-1835  
Cases T and W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 C/W 4/  
Case Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 C/W 4/  
Case M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 C/W 4/  
Case N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 C/W 4/  
Case 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 C/W 4/  
Case 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 C/W 4/  
Maximum power dissipation (P ) . . . . . . . . . . . . . . . . . . . . . . . . 1.0 watts  
D
Junction temperature (T ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C 5/  
J
Endurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 cycles/byte (minimum)  
Data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 years minimum  
1.4 Recommended operating conditions.  
Supply voltage range (V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5 V dc minimum to 5.5 V dc maximum  
CC  
Supply voltage (V  
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.0 V dc  
SS  
High level input voltage range (V ) . . . . . . . . . . . . . . . . . . . . . . 2.0 V dc to V  
+ 1.0 V dc 6/  
CC  
IH  
Low level input voltage range (V ) . . . . . . . . . . . . . . . . . . . . . . -0.1 V dc to 0.8 V dc  
IL  
Case operating temperature range (T ) . . . . . . . . . . . . . . . . . . -55 C to +125 C  
C
1.5 Digital logic testing for device classes Q and V.  
Fault coverage measurement of manufacturing  
logic tests (MIL-STD-883, test method 5012) . . . . . . . . . . . . . . 100 percent  
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the  
maximum levels may degrade performance and affect reliability.  
2/ All voltages referenced to V  
(V = ground), unless otherwise specified.  
SS SS  
3/ Negative undershoots to a minimum of -1.0 V are allowed with a maximum of 20 ns pulse width.  
4/ When the thermal resistance for this case is specified in MIL-STD-1835, that value shall supersede  
the value indicated herein.  
5/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening  
conditions in accordance with method 5004 of MIL-STD-883.  
6/ For device types 16-19 only, V on RES shall be V  
- 0.5 V min. to V  
+ 1.0 V max.  
IH  
CC  
CC  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-38267  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
G
SHEET  
3
DSCC FORM 2234  
APR 97  

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