5962-0620705Q3A, 5962-0620706Q3A, 5962-0620707Q2A, 5962-0620708Q2A
Electrical Specifications ICL3238E Test Conditions: VCC = 4.5V to 5.5V, C1 = 0.01mF, C2 - C4 = 0.1mF, Unless Otherwise Specified.
Typicals are at TA = 25°C, VCC = 5.0V (Continued) (Continued)
TEMP
PARAMETER
TEST CONDITIONS
(°C)
MIN
TYP
MAX
UNITS
ENHANCED AUTOMATIC POWER-DOWN (FORCEON = GND, FORCEOFF = VCC
)
Receiver Input Thresholds to
INVALID High
Powered Up
Full
Full
-2.7
-0.3
-
-
2.7
0.3
V
V
Receiver Input Thresholds to
INVALID Low
Powered Down
INVALID Output Voltage Low
INVALID Output Voltage High
TRANSMITTER OUTPUTS
Output Voltage Swing
IOUT = 1.0mA
IOUT = -1.0mA
Full
Full
-
-
-
0.4
-
V
V
VCC-0.9
All Transmitter Outputs Loaded with 3kΩ to Ground
Full
Full
Full
±5.0
±5.4
±35
-
-
V
Output Short-Circuit Current
Output Leakage Current
-
-
±60
±25
mA
µA
V
OUT = ±12V, VCC = 0V or 4.5V to 5.5V,
Automatic Power-down or FORCEOFF = GND
TIMING CHARACTERISTICS
Maximum Data Rate
Transmitter Skew
RL = 3kΩ, CL = 1000pF, One Transmitter Switching
Full
Full
Full
Full
Full
250
500
200
100
15
-
kbps
ns
t
PHL - tPLH
tPHL - tPLH
CC = 5.0V,
RL = 3kΩ to 7kΩ,
Measured From 3V to -3V or -3V
to 3V
-
-
1000
1000
50
Receiver Skew
ns
Transition Region Slew Rate
V
CL = 150pF to 1000pF
CL = 150pF to 2500pF
6
4
V/µs
V/µs
12
50
ESD PERFORMANCE
RS-232 Pins (TOUT, RIN
)
IEC61000-4-2 Air Gap Discharge
IEC61000-4-2 Contact Discharge
25
25
25
25
-
-
-
-
±15
±8
-
-
-
-
kV
kV
kV
kV
Human Body Model (MIL-STD 883 Method 3015)
Human Body Model (MIL-STD 883 Method 3015)
±15
±2.5
All Other Pins
NOTE:
4. These inputs utilize a positive feedback resistor. The input current is negligible when the input is at either supply rail.
Die Characteristics
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 13.0kÅ ± 1.0kÅ
Top Metallization:
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
ICL3221E: 286
Type: AlSiCu
ICL3232E: 296
Thickness: 10.0kÅ ± 1kÅ
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
GND
ICL3243E: 464
ICL3238E: 1235
Process:
Si Gate CMOS
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FN6298.0
May 31, 2006
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