Datasheet > 5962-01533

5962-01533

更新时间： 2022-11-26 01:28:37

品牌	Logo	应用领域
艾法斯 - AEROFLEX		静态存储器
页数	文件大小	规格书
14页	138K
描述
16Megabit SRAM MCM

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数据手册

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5962-01533 数据手册

AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)*

(-40°C to +125°C) (V_DD= 3.3V + 0.3)

SYMBOL

PARAMETER

MIN

MAX

UNIT

Read cycle time

t_AVAV

t_AVQV

Read access time

Output hold time

t_AXQX

G-controlled Output Enable time

t_GLQX

t_GLQV

G-controlled Output Enable time (Read Cycle 3)

G-controlled output three-state time

t_GHQZ

2,3

En-controlled Output Enable time

En-controlled access time

t_ETQX

t_ETQV

1,2,4

En-controlled output three-state time

t_EFQZ

Notes: * Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.

1. Functional test.

2. Three-state is defined as a 300mV change from steady-state output voltage.

3. The ET (enable true) notation refers to the falling edge of En. SEU immunity does not affect the read parameters.

4. The EF (enable false) notation refers to the rising edge ofEn. SEU immunity does not affect the read parameters.

High Z to Active Levels

Active to High Z Levels

V_H- 300mV

V_LOAD+ 300mV

}

{

V_LOAD

V_LOAD- 300mV

V_L+ 300mV

Figure 3. 3-Volt SRAM Loading

1...3 4 567 8 9...14

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