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5962-01-389-0203 PDF预览

5962-01-389-0203

更新时间: 2024-02-04 17:38:21
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 102K
描述
Multiplexers/Switches, 1 Func, CMOS, CDIP8

5962-01-389-0203 技术参数

生命周期:Contact Manufacturer包装说明:DIP, DIP8,.3
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.79JESD-30 代码:R-XDIP-T8
功能数量:1端子数量:8
最大通态电阻 (Ron):100 Ω最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:CERAMIC
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
电源:5,12/+-15 V认证状态:Not Qualified
子类别:Multiplexer or Switches表面贴装:NO
最长接通时间:175 ns切换:BREAK-BEFORE-MAKE
技术:CMOS温度等级:MILITARY
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUALBase Number Matches:1

5962-01-389-0203 数据手册

 浏览型号5962-01-389-0203的Datasheet PDF文件第1页浏览型号5962-01-389-0203的Datasheet PDF文件第3页浏览型号5962-01-389-0203的Datasheet PDF文件第4页浏览型号5962-01-389-0203的Datasheet PDF文件第5页浏览型号5962-01-389-0203的Datasheet PDF文件第6页浏览型号5962-01-389-0203的Datasheet PDF文件第7页 
DG417/418/419  
Vishay Siliconix  
ORDERING INFORMATION  
Temp Range  
DG417/418  
Package  
Part Number  
DG417DJ  
8-Pin Plastic MiniDIP  
8-Pin Narrow SOIC  
8-Pin CerDIP  
DG418DJ  
–40 to 85_C  
DG417DY  
DG418DY  
DG417AK, DG417AK/883, 5962-90701MPA  
DG418AK, DG418AK/883, 5962-90702MPA  
–55 to 125_C  
DG419  
8-Pin Plastic MiniDIP  
8-Pin Narrow SOIC  
8-Pin CerDIP  
DG419DJ  
–40 to 85_C  
DG419DY  
–55 to 125_C  
DG419AK, DG419AK/883, 5962-90703MPA  
NOTE: SMD product is dual marked with /883 number.  
ABSOLUTE MAXIMUM RATINGS  
b
Voltages Referenced to V–  
Power Dissipation (Package)  
c
8-Pin Plastic MiniDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW  
8-Pin Narrow SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW  
8-Pin CerDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW  
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V  
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V  
d
e
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND –0.3 V) to (V+) + 0.3 V  
a
L
Digital Inputs V , V . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) + 2 V  
S
D
Notes:  
or 30 mA, whichever occurs first  
a. Signals on S , D , or IN exceeding V+ or V– will be clamped by internal  
X
X
X
diodes. Limit forward diode current to maximum current ratings.  
b. All leads welded or soldered to PC Board.  
c. Derate 6 mW/_C above 75_C  
e. Derate 12 mW/_C above 75_C  
Current, (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA  
Current (S or D) Pulsed 1 ms, 10% duty cycle . . . . . . . . . . . . . . . . . . 100 mA  
Storage Temperature  
(AK Suffix) . . . . . . . . . . . . . . . . . . –65 to 150_C  
(DJ, DY Suffix) . . . . . . . . . . . . . . –65 to 125_C  
d. Derate 6.5 mW/_C above 75_C  
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)  
V+  
S
V
L
V–  
V+  
Level  
Shift/  
Drive  
V
IN  
GND  
V–  
D
FIGURE 1.  
Document Number: 70051  
S-52433—Rev. E, 06-Sep-99  
www.vishay.com S FaxBack 408-970-5600  
4-2  

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