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5962-01-389-0203 PDF预览

5962-01-389-0203

更新时间: 2024-02-27 18:36:45
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 102K
描述
Multiplexers/Switches, 1 Func, CMOS, CDIP8

5962-01-389-0203 技术参数

生命周期:Contact Manufacturer包装说明:DIP, DIP8,.3
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.79JESD-30 代码:R-XDIP-T8
功能数量:1端子数量:8
最大通态电阻 (Ron):100 Ω最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:CERAMIC
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
电源:5,12/+-15 V认证状态:Not Qualified
子类别:Multiplexer or Switches表面贴装:NO
最长接通时间:175 ns切换:BREAK-BEFORE-MAKE
技术:CMOS温度等级:MILITARY
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUALBase Number Matches:1

5962-01-389-0203 数据手册

 浏览型号5962-01-389-0203的Datasheet PDF文件第4页浏览型号5962-01-389-0203的Datasheet PDF文件第5页浏览型号5962-01-389-0203的Datasheet PDF文件第6页浏览型号5962-01-389-0203的Datasheet PDF文件第7页浏览型号5962-01-389-0203的Datasheet PDF文件第8页浏览型号5962-01-389-0203的Datasheet PDF文件第9页 
DG417/418/419  
Vishay Siliconix  
"APPLICATIONS (CONT'D)  
Micropower UPS Transfer Switch  
Programmable Gain Amplifier  
When VCC drops to 3.3 V, the DG417 changes states, closing  
SW1 and connecting the backup cell, as shown in Figure 11.  
D1 prevents current from leaking back towards the rest of the  
circuit. Current consumption by the CMOS analog switch is  
around 100 pA; this ensures that most of the power available  
is applied to the memory, where it is really needed. In the  
stand-by mode, hundreds of mA are sufficient to retain memory  
data.  
The DG419, as shown in Figure 12, allows accurate gain  
selection in a small package. Switching into virtual ground  
reduces distortion caused by rDS(on) variation as a function of  
analog signal amplitude.  
GaAs FET Driver  
When the 5-V supply comes back up, the resistor divider  
senses the presence of at least 3.5 V, and causes a new  
change of state in the analog switch, restoring normal  
operation.  
The DG419, as shown in Figure 13 may be used as a GaAs  
FETdriver. IttranslatesaTTLcontrolsignalinto8-V, 0-Vlevel  
outputs to drive the gate.  
V
L
V+  
D
1
SW  
1
D
S
V
CC  
(5 V)  
+
R
V
1
SENSE  
Memory  
DG417  
3 V Li Cell  
453 kW  
IN  
GND  
V–  
R
2
383 kW  
FIGURE 11. Micropower UPS Circuit  
+5 V  
V+  
DG419  
R
R
1
S
S
1
V
L
GaAs FET  
2
2
S
S
1
IN  
V
D
OUT  
2
D
DG419  
5 V  
V
IN  
+
GND  
V–  
V
OUT  
–8 V  
FIGURE 12. Programmable Gain Amplifier  
FIGURE 13. GaAs FET Driver  
Document Number: 70051  
S-52433—Rev. E, 06-Sep-99  
www.vishay.com S FaxBack 408-970-5600  
4-10  

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