5秒后页面跳转
57908 PDF预览

57908

更新时间: 2024-09-26 01:25:19
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
8页 482K
描述
CREE Silicon Carbide MOSFET Evaluation Kit

57908 数据手册

 浏览型号57908的Datasheet PDF文件第2页浏览型号57908的Datasheet PDF文件第3页浏览型号57908的Datasheet PDF文件第4页浏览型号57908的Datasheet PDF文件第5页浏览型号57908的Datasheet PDF文件第6页浏览型号57908的Datasheet PDF文件第7页 
PTRA093302FC  
Thermally-Enhanced High Power RF LDMOS FET  
330 W, 50 V, 746 – 768 MHz  
Description  
The PTRA093302FC is a 330-watt LDMOS FET with an asym-  
metric design intended for use in multi-standard cellular power  
amplifier applications in the 746 MHz to 768 MHz frequency band.  
Features include dual-path design, input matching, high gain and  
thermally-enhanced package with earless flange. Manufactured  
PTRA093302FC  
Package H-37248-4  
with Wolfspeed's advanced LDMOS process, this device provides  
excellent thermal performance and superior reliability.  
Features  
Single-carrier WCDMA Drive-up  
•ꢀ Input matched  
VDD = 48 V, IDQ = 400 mA, ƒ = 768 MHz,  
3GPP WCDMA signal,  
•ꢀ Asymmetric Doherty design  
PAR = 10 dB, 3.84 MHz BW  
- Main: P  
- Peak: P  
= 150 W Typ  
= 175 W Typ  
1dB  
1dB  
24  
20  
16  
12  
8
60  
40  
20  
0
•ꢀ Typical Pulsed CW performance, 746–768 MHz,  
Efficiency  
48 V, combined outputs  
- Output power at P  
- Efficiency = 54%  
- Gain = 16.5 dB  
= 200 W  
1dB  
Gain  
•ꢀ Capable of handling 10:1 VSWR @48 V, 79 W (CW)  
output power  
•ꢀ Integrated ESD protection  
-20  
-40  
-60  
•ꢀ Human Body Model Class 1C (per ANSI/ESDA/  
PAR @ 0.01% CCDF  
JEDEC JS-001)  
4
•ꢀ Low thermal resistance  
•ꢀ Pb-free and RoHS-compliant  
0
ptra093302dc_g1  
25  
30  
35  
40  
45  
50  
55  
Average Output Power (dBm)  
RF Characteristics  
Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)  
= 48 V, I = 400 mA, P = 79 W avg, V = (V @I = 400 mA) – 3.0 V, ƒ = 768 MHz. 3GPP WCDMA signal:  
V
DD  
DQ  
OUT  
GS(peak)  
GS  
DQ  
peak/average = 10 dB @ 0.01% CCDF, channel bandwidth = 3.84 MHz.  
Characteristic  
Gain  
Symbol  
Min  
16.0  
47.0  
Typ  
17.25  
51.6  
Max  
Unit  
dB  
G
ps  
Drain Efficiency  
hD  
%
Adjacent Channel Power Ratio  
ACPR  
–32.5  
–30.0  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Rev. 04, 2018-06-22  
4600 Silicon Drive  
|
Durham, NC 27703  
|
www.wolfspeed.com  

与57908相关器件

型号 品牌 获取价格 描述 数据表
579-10-064-04-000429 MILL-MAX

获取价格

IC Socket, BGA64, 64 Contact(s), ROHS COMPLIANT
579-10-064-04-005429 MILL-MAX

获取价格

IC Socket, BGA64, 64 Contact(s),
579-10-100-05-000429 MILL-MAX

获取价格

IC Socket, BGA100, 100 Contact(s), ROHS COMPLIANT
579-10-131-07-001429 MILL-MAX

获取价格

IC Socket, BGA131, 131 Contact(s), ROHS COMPLIANT
579-10-144-07-001429 MILL-MAX

获取价格

IC Socket, BGA144, 144 Contact(s), ROHS COMPLIANT
579-10-165-01-005429 MILL-MAX

获取价格

IC Socket, BGA165, 165 Contact(s), ROHS COMPLIANT
579-10-168-01-005429 MILL-MAX

获取价格

IC Socket, BGA168, 168 Contact(s),
579-10-169-07-001429 MILL-MAX

获取价格

IC Socket, BGA169, 169 Contact(s), ROHS COMPLIANT
579-10-179-07-001429 MILL-MAX

获取价格

IC Socket, BGA179, 179 Contact(s), ROHS COMPLIANT
579-10-256-08-007429 MILL-MAX

获取价格

IC Socket, BGA256, 256 Contact(s), ROHS COMPLIANT