Datasheet > 534FE622M080BGR

534FE622M080BGR

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
芯科 - SILICON		振荡器晶体振荡器石英晶振压控振荡器
页数	文件大小	规格书
12页	207K
描述
VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR (VCXO) 10 MHZ TO 1.4 GHZ

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534FE622M080BGR 数据手册

Si550

Table 8. Absolute Maximum Ratings

Parameter

Supply Voltage

Symbol

Rating

Units

Volts

ºC

–0.5 to +3.8

Input Voltage

–0.5 to V + 0.3

Storage Temperature

–55 to +125

>2500

260

ESD Sensitivity (HBM, per JESD22-A114)

Soldering Temperature (lead-free profile)

ESD

Volts

ºC

PEAK

Soldering Temperature Time @ T

(lead-free profile)

seconds

PEAK

Note: Stresses beyond those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional

operation or specification compliance is not implied at these conditions.

Table 9. Environmental Compliance

The Si550 meets the following qualification test requirements.

Parameter

Conditions/ Test Method

MIL-STD-883F, Method 2002.3 B

MIL-STD-883F, Method 2007.3 A

MIL-STD-883F, Method 203.8

MIL-STD-883F, Method 1014.7

MIL-STD-883F, Method 2016

Mechanical Shock

Mechanical Vibration

Solderability

Gross & Fine Leak

Resistance to Solvents

Preliminary Rev. 0.3

1...3 4 567 8 9...12

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