Datasheet > 534FE622M080BGR

534FE622M080BGR

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
芯科 - SILICON		振荡器晶体振荡器石英晶振压控振荡器
页数	文件大小	规格书
12页	207K
描述
VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR (VCXO) 10 MHZ TO 1.4 GHZ

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534FE622M080BGR 数据手册

Si550

1. Electrical Specifications

Table 1. Recommended Operating Conditions

Parameter

Symbol

Test Condition

3.3 V option

Min

2.97

2.25

1.71

—

Typ

3.3

2.5

1.8

Max

3.63

2.75

1.89

—

Units

Supply Voltage

2.5 V option

1.8 V option

Supply Current

Output enabled

TriState mode

—

Output Enable (OE)

0.75 x V

—

0.5

Operating Temperature Range

–40

—

ºC

Notes:

1. Selectable parameter specified by part number. See Section 3. "Ordering Information" on page 8 for further details.

2. OE pin includes a 17 kΩ pullup resistor to VDD. Pulling OE to ground causes outputs to tristate.

Table 2. V_CControl Voltage Input

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

1,2,3

Control Voltage Tuning Slope

10 to 90% of V

—

ppm/V

135

180

Control Voltage Linearity

BSL

–5

–10

9.3

500

—

±1

±5

+10

10.7

—

Incremental

Modulation Bandwidth

10.0

—

kHz

kΩ

V Input Impedance

Nominal Control Voltage

@ f

3/8 x V

—

CNOM

Control Voltage Tuning Range

Notes:

1. Positive slope; selectable option by part number. See Section 3. "Ordering Information" on page 8.

2. For best jitter and phase noise performance, always choose the smallest K_Vthat meets the application’s minimum APR

requirements. See “AN266: VCXO Tuning Slope (K_V), Stability, and Absolute Pull Range (APR)” for more information.

3. K_Vvariation is ±28% of typical values.

4. BSL determined from deviation from best straight line fit with V_Cranging from 10 to 90% of V_DD. Incremental slope

determined with V_Cranging from 10 to 90% of V_DD

Preliminary Rev. 0.3

123 4 5 6 7...12

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