5秒后页面跳转
5082-2774 PDF预览

5082-2774

更新时间: 2024-01-25 04:15:21
品牌 Logo 应用领域
其他 - ETC 微波混频器二极管脉冲光电二极管
页数 文件大小 规格书
5页 117K
描述
Schottky Barrier Diodes for Stripline. Microstrip Mixers and Detectors (117K in pdf)

5082-2774 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:S-PXMW-F2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.91Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:MIXER DIODE频带:X BAND
最大阻抗:400 Ω最小阻抗:200 Ω
JESD-30 代码:S-PXMW-F2JESD-609代码:e0
最大噪声指数:6 dB元件数量:1
端子数量:2最大工作频率:18 GHz
最小工作频率:1 GHz最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:MICROWAVE
峰值回流温度(摄氏度):NOT SPECIFIED脉冲输入最大功率:0.125 W
脉冲输入功率最小值:1 W认证状态:Not Qualified
子类别:Microwave Mixer Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED肖特基势垒类型:LOW BARRIER
Base Number Matches:1

5082-2774 数据手册

 浏览型号5082-2774的Datasheet PDF文件第1页浏览型号5082-2774的Datasheet PDF文件第3页浏览型号5082-2774的Datasheet PDF文件第4页浏览型号5082-2774的Datasheet PDF文件第5页 
Maximum Ratings  
Operating and Storage Temperature Range  
C2 Packaged Diodes ................................................ -65°Cto+150°C  
H2 Packaged Diodes ................................................ -65°Cto+175°C  
Pulse Power Incident at TCASE = 25°C............................................... 1W  
(1µspulse,Du=0.001)  
CW Power Dissipation at TCASE = 25°C  
(Measured in an infinite heat sink) ......................................... 125mW  
Deratelinearlytozeroatmaximumoperatingtemperature.  
Diode Mounting Temperature in Packages  
C2 .................................................................... 235°C for 10 sec max.  
H2 .................................................................... 260°C for 10 sec max.  
Peak Inverse Voltage......................................................................... 4 V  
These diodes are ESD sensitive. Handle with care to avoid static  
discharge through the diode.  
RF Electrical Specifications at T = 25°C  
A
Maximum  
Noise  
IF  
Typical  
Junction  
Capacitance  
Cj (pF)  
Part  
Number  
5082-  
Test  
Freq.  
(GHz)  
Impedance  
ZIF ()  
Figure  
Maximum  
SWR  
Barrier  
NF (dB)  
Min.  
Max.  
Package  
2765  
2785  
9.375  
Low  
Low  
6.0  
6.5  
150  
200  
150  
350  
1.5:1  
2.0:1  
HermeticH2  
0.18  
2207  
2209  
Medium  
Medium  
6.0  
6.5  
400  
350  
1.5:1  
2.0:1  
Broadband C2  
2774  
2794  
Low  
Low  
6.0  
6.5  
1.5:1  
2.0:1  
Test  
Conditions  
DC Load Resistance = 0 Ω  
L.O. Power=1mW  
IF=30MHz, 1.5dBNF  
V=0  
*Minimum batch size 20 units.  
Typical Detector Characteristics at T = 25°C  
A
Medium Barrier and Low Barrier (DC Bias)  
Parameter  
Symbol  
Typical Value  
Units  
Test Conditions  
Tangential Sensitivity  
TSS  
-54  
dBm  
mV/µW  
20 µABias, RL =100KΩ  
Pin =-40dBm  
Video Bandwidth = 2 MHz  
f=10GHz  
Voltage Sensitivity  
Video Resistance  
γ
6.6  
RV  
1400  
Low Barrier (Zero Bias)  
Parameter  
Symbol  
Typical Value  
Units  
Test Conditions  
Tangential Sensitivity  
Voltage Sensitivity  
Video Resistance  
TSS  
-44  
dBm  
Zero Bias, RL = 10 MΩ  
Pin =-30dBm  
Video Bandwidth = 2 MHz  
f=10GHz  
γ
10  
mV/µW  
RV  
1.8  
ΜΩ  
3-58  

与5082-2774相关器件

型号 品牌 描述 获取价格 数据表
5082-2775 AGILENT Mixer Diode, Low Barrier, X Band, 400ohm Z(V) Max, 6dB Noise Figure, Silicon

获取价格

5082-2785 ASI SCHOTTKY MEDIUM BARRIER DIODE

获取价格

5082-2787 ASI SCHOTTKY BARRIER DIODE

获取价格

5082-2794 ASI SCHOTTKY LOW BARRIER DIODE

获取价格

5082-2795 AGILENT SILICON, LOW BARRIER SCHOTTKY,XBAND, MIXER DIODE

获取价格

5082-2800 AGILENT Schottky Barrier Diodes for General Purpose Applications

获取价格