Datasheet > 501ECG100M000DAFR

501ECG100M000DAFR

更新时间： 2023-01-03 00:56:15

品牌	Logo	应用领域
芯科 - SILICON		/
页数	文件大小	规格书
7页	505K
描述
LVCMOS Output Clock Oscillator, 100MHz Nom, DFN-4

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501ECG100M000DAFR 数据手册

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Si501/2/3/4

LVCMOS CMEMS^®Programmable Oscillator Series

Environmental Compliance and Package Information

Thermal Conditions

Parameter Symbol

Parameter

Test Condition

3.2 x 5 mm, still air

2.5 x 3.2 mm, still air

2 x 2.5 mm, still air

Value

187

239

Unit

Mechanical Shock

MIL-STD-883, M2002 Cond B. (1,500g)

Thermal

_JA

Mechanical Shock High g MIL-STD-883, M2002, Cond. E (10,000g)

ºC/W

Impedance

Mechanical Vibration

Solderability

Temperature Cycle

Resistance to Solder Heat

Contact Pads

MIL-STD-883, Method 2007

MIL-STD-883, Method 2003

JESD22, Method A104

MIL-STD-883, Method 2036

Gold over Nickel/Palladium

241

Clock Timing Characteristics

V_DD= +1.71 V to +3.63 V, T_A= -40 to 85 ºC unless stated otherwise.

Parameter

Startup Time¹

Symbol

T_SU

Test Condition/Comment

From V_DDcrossing 1.71 to first clock

From Stop mode

From Sleep mode

From Doze mode

To Stop

Min Typ

Max

Unit

—

2.5

—

2.5

—

1.5 x T_CLK+ 35 ns

Resume Time ^{2, 3}

T_RUN

2.55

1.5 x T_CLK+ 35 ns

Output Disable Time ^{2, 3}

Frequency Update Time ²

T_D

To Sleep/Doze

To New Frequency

225

s

T_{NEW_FREQ}

—

1. Hold FS/OE high (strong or weak) during powerup for fastest time to clock.

2. Si501 and Si502 only. Si503 has frequency select (FS) only and does not support Stop, Doze or Sleep.

3. T_CLK= clock period = 1/ F_CLK

AC Waveforms

V_DD

1.71V

T_SU

Si501/2/3 Power On Time

R_UP<1k

R_UP>20k

T_D

FS/OE

T_RUN

T_{NEW_FREQ}

Hi-Z

CLK

Si501/2 AC Waveform

R_UP< 1k

R_UP> 20k

R_DOWN> 20k

T_{NEW_ FREQ}

CLK

Hi-Z

Si503 AC Waveform

Revision 0.72

www.silabs.com/cmems

1 234 5 6 7

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