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4N33SR2M PDF预览

4N33SR2M

更新时间: 2024-02-14 13:25:46
品牌 Logo 应用领域
安森美 - ONSEMI 输出元件光电
页数 文件大小 规格书
12页 337K
描述
6 引脚 DIP 通用光电达林顿光耦合器

4N33SR2M 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:DIP
包装说明:SURFACE MOUNT PACKAGE-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.40.80.00风险等级:3.45
Is Samacsys:N其他特性:UL APPROVED
Coll-Emtr Bkdn Voltage-Min:30 V配置:SINGLE
标称电流传输比:500%最大暗电源:100 nA
最大正向电流:0.08 A最大绝缘电压:7500 V
JESD-609代码:e3元件数量:1
最高工作温度:100 °C最低工作温度:-40 °C
光电设备类型:DARLINGTON OUTPUT OPTOCOUPLER端子面层:Matte Tin (Sn)
Base Number Matches:1

4N33SR2M 数据手册

 浏览型号4N33SR2M的Datasheet PDF文件第1页浏览型号4N33SR2M的Datasheet PDF文件第2页浏览型号4N33SR2M的Datasheet PDF文件第3页浏览型号4N33SR2M的Datasheet PDF文件第5页浏览型号4N33SR2M的Datasheet PDF文件第6页浏览型号4N33SR2M的Datasheet PDF文件第7页 
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M  
ELECTRICAL CHARACTERISTICS TRANSFER CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Symbol  
Parameter  
Test Conditions  
Device  
Min  
Typ  
Max  
Unit  
DC CHARACTERISTICS  
I
Collector Output Current  
(Note 3) (Note 4) (Note 5)  
I = 10 mA, V = 10 V,  
4N32M,  
4N33M  
50 (500)  
10 (100)  
mA (%)  
mA (%)  
C(CTR)  
F
B
CE  
I
= 0  
4N29M,  
4N30M  
I = 1 mA, V = 5 V  
H11B1M  
TIL113M  
4NXXM  
TIL113M  
H11B1M  
5 (500)  
mA (%)  
F
CE  
I = 10 mA, V = 1 V  
30 (300)  
mA (%)  
F
CE  
V
Saturation Voltage (Note 3) (Note 5)  
I = 8 mA, I = 2.0 mA  
1.0  
1.25  
1.0  
V
V
V
CE (SAT)  
F
C
I = 1 mA, I = 1 mA  
F
C
AC CHARACTERISTIC  
Turnon Time  
t
I = 200 mA, I = 50 mA,  
4NXXM,  
TIL113M  
25  
5.0  
ms  
ms  
ms  
ON  
F
V
C
= 10 V, R = 100 W  
CC  
L
I = 10 mA, V = 10 V,  
H11B1M  
F
L
CE  
R = 100 W  
t
Turnoff Time  
I = 200 mA, I = 50mA,  
4N32M,  
4N33M,  
TIL113M  
100  
OFF  
F
CC  
C
L
V
= 10 V, R = 100 W  
4N29M,  
4N30M  
40  
ms  
ms  
I = 10 mA, V = 10 V,  
H11B1M  
18  
F
L
CE  
R = 100 W  
BW  
Bandwidth (Note 6) (Note 7)  
30  
kHz  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
3. Indicates JEDEC registered data.  
4. The current transfer ratio(I /I ) is the ratio of the detector collector current to the LED input current.  
C
F
5. Pulse test: pulse width = 300 ms, duty cycle v2.0%.  
6. I adjusted to I = 2.0 mA and I = 0.7 mA rms.  
F
C
C
7. The frequency at which I is 3 dB down from the 1 kHz value.  
C
ELECTRICAL CHARACTERISTICS ISOLATION CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Symbol  
VISO  
Parameter  
InputOutput Isolation Voltage  
Isolation Capacitance  
Test Conditions  
t = 1 Minute  
Min  
4170  
Typ  
Max  
Unit  
VAC  
RMS  
CISO  
V
IO  
V
IO  
= 0 V, f = 1 MHz  
0.2  
pF  
11  
RISO  
Isolation Resistance  
=
500 VDC, T = 25°C  
10  
W
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
4
 

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