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4N27M

更新时间： 2024-02-27 21:35:24
品牌 Logo 应用领域
安森美 - ONSEMI 输出元件晶体管光电晶体管
页数 文件大小 规格书
12页 330K
描述
6 引脚 DIP 封装光电晶体管输出光耦合器

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4N27M 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：DIP-6
Reach Compliance Code：unknown风险等级：5.63
其他特性：UL RECOGNIZEDColl-Emtr Bkdn Voltage-Min：30 V
配置：SINGLE标称电流传输比：10%
最大暗电源：50 nA最大正向电流：0.06 A
最大绝缘电压：7500 VJESD-609代码：e3
元件数量：1最高工作温度：100 °C
最低工作温度：-55 °C光电设备类型：TRANSISTOR OUTPUT OPTOCOUPLER
端子面层：MATTE TINBase Number Matches：1

4N27M 数据手册

 浏览型号4N27M的Datasheet PDF文件第1页浏览型号4N27M的Datasheet PDF文件第2页浏览型号4N27M的Datasheet PDF文件第3页浏览型号4N27M的Datasheet PDF文件第5页浏览型号4N27M的Datasheet PDF文件第6页浏览型号4N27M的Datasheet PDF文件第7页 
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M  
ELECTRICAL CHARACTERISTICS − INDIVIDUAL COMPONENT CHARACTERISTICS  
(T = 25°C unless otherwise noted)  
A
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
EMITTER  
Input Forward Voltage  
I = 10 mA  
−
−
1.18  
1.50  
10  
V
V
F
F
I
R
Reverse Leakage Current  
V
R
= 6.0 V  
0.001  
ꢁ A  
DETECTOR  
BV  
BV  
BV  
Collector−to−Emitter Breakdown Voltage  
Collector−to−Base Breakdown Voltage  
Emitter−to−Collector Breakdown Voltage  
Collector−to−Emitter Dark Current  
Collector−to−Base Dark Current  
Capacitance  
I
I
= 1.0 mA, I = 0  
30  
70  
7
100  
120  
10  
1
−
−
V
V
CEO  
CBO  
ECO  
C
F
= 100 ꢁ A, I = 0  
C
F
I = 100 ꢁ A, I = 0  
E
−
V
F
I
V
= 10 V, I = 0  
−
50  
20  
−
nA  
nA  
pF  
CEO  
CBO  
CE  
CB  
CE  
F
I
V
V
= 10 V  
−
−
C
= 0 V, f = 1 MHz  
−
8
CE  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
ELECTRICAL CHARACTERISTICS − TRANSFER CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Symbol  
Parameter  
Test Conditions  
Device  
Min  
Typ  
Max  
Unit  
DC CHARACTERISTICS  
CTR  
Current Transfer Ratio,  
Collector−to−Emitter  
I = 10 mA, V = 10 V  
4N35M, 4N36M, 4N37M  
4N25M, 4N26M  
100  
20  
−
−
−
−
−
−
−
−
%
F
CE  
4N27M, 4N28M  
10  
I = 10 mA, V = 10 V,  
4N35M, 4N36M, 4N37M  
40  
F
A
CE  
T = −55°C  
I = 10 mA, V = 10 V,  
A
4N35M, 4N36M, 4N37M  
40  
−
−
−
−
−
F
CE  
T = +100°C  
V
Collector−to−Emitter  
Saturation Voltage  
I
= 2 mA, I = 50 mA  
4N25M, 4N26M, 4N27M,  
4N28M  
0.5  
0.3  
V
CE (SAT)  
C
C
F
I
= 0.5 mA, I = 10 mA  
4N35M, 4N36M, 4N37M  
−
F
AC CHARACTERISTIC  
T
Non−Saturated  
Turn−on Time  
I = 10 mA, V = 10 V,  
L
4N25M, 4N26M, 4N27M,  
4N28M  
−
−
−
−
2
2
2
2
−
10  
−
ꢁ s  
ꢁ s  
ON  
F
CC  
R = 100 ꢀ (Figure 11)  
I
= 2 mA, V = 10 V,  
L
4N35M, 4N36M, 4N37M  
C
CC  
R = 100 ꢀ (Figure 11)  
T
OFF  
Turn−off Time  
I = 10 mA, V = 10 V,  
4N25M, 4N26M, 4N27M,  
4N28M  
F
CC  
R = 100 ꢀ (Figure 11)  
L
I
= 2 mA, V = 10 V,  
L
4N35M, 4N36M, 4N37M  
10  
C
CC  
R = 100 ꢀ (Figure 11)  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
ELECTRICAL CHARACTERISTICS − ISOLATION CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Symbol  
VISO  
Parameter  
Input−Output Isolation Voltage  
Isolation Capacitance  
Test Conditions  
t = 1 Minute  
Min  
4170  
−
Typ  
−
Max  
−
Unit  
VAC  
RMS  
CISO  
V
I−O  
V
I−O  
= 0 V, f = 1 MHz  
0.2  
−
−
pF  
11  
RISO  
Isolation Resistance  
=
500 VDC, T = 25°C  
10  
−
ꢀ
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
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