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4N26MTV PDF预览

4N26MTV

更新时间: 2024-01-22 13:08:58
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 输出元件光电
页数 文件大小 规格书
12页 277K
描述
Transistor Output Optocoupler, 1-Element, 7500V Isolation, DIP-6

4N26MTV 技术参数

生命周期:Obsolete包装说明:DIP-6
Reach Compliance Code:unknownHTS代码:8541.40.80.00
风险等级:5.62其他特性:UL RECOGNIZED, VDE APPROVED
Coll-Emtr Bkdn Voltage-Min:30 V配置:SINGLE
标称电流传输比:20%最大暗电源:50 nA
最大正向电流:0.06 A最大绝缘电压:7500 V
元件数量:1最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
Base Number Matches:1

4N26MTV 数据手册

 浏览型号4N26MTV的Datasheet PDF文件第1页浏览型号4N26MTV的Datasheet PDF文件第3页浏览型号4N26MTV的Datasheet PDF文件第4页浏览型号4N26MTV的Datasheet PDF文件第5页浏览型号4N26MTV的Datasheet PDF文件第6页浏览型号4N26MTV的Datasheet PDF文件第7页 
Absolute Maximum Ratings (T = 25°C unless otherwise specified)  
A
Symbol  
Parameter  
Value  
Units  
TOTAL DEVICE  
T
Storage Temperature  
Operating Temperature  
-55 to +150  
-55 to +100  
260 for 10 sec  
250  
°C  
°C  
STG  
T
OPR  
T
Wave solder temperature (see page 8 for reflow solder profile)  
°C  
SOL  
P
Total Device Power Dissipation @ T = 25°C  
mW  
D
A
Derate above 25°C  
2.94  
EMITTER  
I
DC/Average Forward Input Current  
Reverse Input Voltage  
60  
6
mA  
V
F
V
R
I (pk)  
Forward Current – Peak (300µs, 2% Duty Cycle)  
3
A
F
P
LED Power Dissipation @ T = 25°C  
120  
1.41  
mW  
mW/°C  
D
A
Derate above 25°C  
DETECTOR  
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Collector Voltage  
30  
70  
V
V
CEO  
CBO  
ECO  
7
V
P
Detector Power Dissipation @ T = 25°C  
150  
1.76  
mW  
mW/°C  
D
A
Derate above 25°C  
Electrical Characteristics (T = 25°C unless otherwise specified)  
A
Individual Component Characteristics  
Symbol  
EMITTER  
Parameter  
Test Conditions  
Min.  
Typ.* Max. Unit  
V
Input Forward Voltage  
I = 10mA  
1.18  
1.50  
10  
V
F
F
I
Reverse Leakage Current  
V = 6.0V  
0.001  
µA  
R
R
DETECTOR  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Collector Breakdown Voltage  
Collector-Emitter Dark Current  
Collector-Base Dark Current  
Capacitance  
I = 1.0mA, I = 0  
30  
70  
7
100  
120  
10  
V
V
CEO  
CBO  
ECO  
C
F
I = 100µA, I = 0  
C
F
I = 100µA, I = 0  
V
E
F
I
I
V
V
V
= 10V, I = 0  
1
50  
20  
nA  
nA  
pF  
CEO  
CBO  
CE  
CB  
CE  
F
= 10V  
C
= 0V, f = 1 MHz  
8
CE  
Isolation Characteristics  
Symbol Characteristic  
Test Conditions  
Min. Typ.* Max.  
Units  
V
R
C
Input-Output Isolation Voltage  
Isolation Resistance  
f = 60Hz, t = 1 sec  
7500  
Vac(pk)  
ISO  
ISO  
ISO  
11  
V
V
= 500 VDC  
10  
I-O  
I-O  
Isolation Capacitance  
= &, f = 1MHz  
0.2  
2
pF  
*Typical values at T = 25°C  
A
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.0  
www.fairchildsemi.com  
2

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