Absolute Maximum Ratings (T = 25°C unless otherwise specified)
A
Symbol
Parameter
Value
Units
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
-55 to +150
-55 to +100
260 for 10 sec
250
°C
°C
STG
T
OPR
T
Wave solder temperature (see page 8 for reflow solder profile)
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
D
A
Derate above 25°C
2.94
EMITTER
I
DC/Average Forward Input Current
Reverse Input Voltage
60
6
mA
V
F
V
R
I (pk)
Forward Current – Peak (300µs, 2% Duty Cycle)
3
A
F
P
LED Power Dissipation @ T = 25°C
120
1.41
mW
mW/°C
D
A
Derate above 25°C
DETECTOR
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
30
70
V
V
CEO
CBO
ECO
7
V
P
Detector Power Dissipation @ T = 25°C
150
1.76
mW
mW/°C
D
A
Derate above 25°C
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Individual Component Characteristics
Symbol
EMITTER
Parameter
Test Conditions
Min.
Typ.* Max. Unit
V
Input Forward Voltage
I = 10mA
1.18
1.50
10
V
F
F
I
Reverse Leakage Current
V = 6.0V
0.001
µA
R
R
DETECTOR
BV
BV
BV
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
I = 1.0mA, I = 0
30
70
7
100
120
10
V
V
CEO
CBO
ECO
C
F
I = 100µA, I = 0
C
F
I = 100µA, I = 0
V
E
F
I
I
V
V
V
= 10V, I = 0
1
50
20
nA
nA
pF
CEO
CBO
CE
CB
CE
F
= 10V
C
= 0V, f = 1 MHz
8
CE
Isolation Characteristics
Symbol Characteristic
Test Conditions
Min. Typ.* Max.
Units
V
R
C
Input-Output Isolation Voltage
Isolation Resistance
f = 60Hz, t = 1 sec
7500
Vac(pk)
Ω
ISO
ISO
ISO
11
V
V
= 500 VDC
10
I-O
I-O
Isolation Capacitance
= &, f = 1MHz
0.2
2
pF
*Typical values at T = 25°C
A
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
www.fairchildsemi.com
2