5秒后页面跳转
4N25GV PDF预览

4N25GV

更新时间: 2024-02-17 07:34:42
品牌 Logo 应用领域
威世 - VISHAY 晶体光电晶体管光电晶体管
页数 文件大小 规格书
9页 150K
描述
Optocoupler with Phototransistor Output

4N25GV 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:unknown
HTS代码:8541.40.80.00风险等级:5.11
其他特性:UL RECOGNIZED, VDE APPROVEDColl-Emtr Bkdn Voltage-Min:30 V
配置:SINGLE当前传输比率-最小值:20%
标称电流传输比:20%最大暗电源:50 nA
最大正向电流:0.06 A最大正向电压:1.5 V
最大绝缘电压:5300 V安装特点:SURFACE MOUNT
元件数量:1最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散:0.16 W子类别:Optocoupler - Transistor Outputs
表面贴装:YESBase Number Matches:1

4N25GV 数据手册

 浏览型号4N25GV的Datasheet PDF文件第1页浏览型号4N25GV的Datasheet PDF文件第2页浏览型号4N25GV的Datasheet PDF文件第3页浏览型号4N25GV的Datasheet PDF文件第5页浏览型号4N25GV的Datasheet PDF文件第6页浏览型号4N25GV的Datasheet PDF文件第7页 
4N25(G)V/ 4N35(G)V Series  
Vishay Telefunken  
Maximum Safety Ratings (according to VDE 0884) see figure 1  
This device is used for protective separation against electrical shock only within the maximum safety ratings.  
This must be ensured by using protective circuits in the applications.  
Input (Emitter)  
Parameters  
Forward current  
Test Conditions  
Symbol  
Value  
130  
Unit  
mA  
I
si  
Output (Detector)  
Parameters  
Power dissipation  
Test Conditions  
25°C  
Symbol  
Value  
265  
Unit  
mW  
T
amb  
P
si  
Coupler  
Parameters  
Rated impulse voltage  
Safety temperature  
Test Conditions  
Symbol  
Value  
6
150  
Unit  
kV  
V
IOTM  
T
si  
Insulation Rated Parameters (according to VDE 0884)  
Parameter  
Partial discharge test voltage – 100%, t  
Routine test  
Test Conditions  
= 1 s  
Symbol  
V
pd  
Min.  
1.6  
Typ.  
Max.  
Unit  
kV  
test  
Partial discharge test voltage – t = 60 s, t  
= 10 s,  
V
IOTM  
6
1.3  
kV  
kV  
Tr  
test  
Lot test (sample test)  
(see figure 2)  
V
pd  
12  
Insulation resistance  
V
V
T
amb  
= 500 V  
= 500 V,  
= 100°C  
R
R
10  
IO  
IO  
11  
10  
IO  
IO  
9
V
IO  
= 500 V,  
R
IO  
10  
T
= 150°C  
amb  
(construction test only)  
V
IOTM  
300  
250  
200  
150  
100  
V
t , t = 1 to 10 s  
1 2  
t , t = 1 s  
3 4  
Phototransistor  
Psi ( mW )  
t
= 10 s  
= 12 s  
test  
t
stres  
V
Pd  
V
V
IOWM  
IORM  
IR-Diode  
Isi ( mA )  
50  
0
0
t
t
t
3 test 4  
150  
0
25  
50  
75  
100  
125  
t
= 60 s  
t
t
t
Tr  
1
2
stres  
13930  
94 9182  
T – Safety Temperature ( °C )  
si  
t
Figure 1. Derating diagram  
Figure 2. Test pulse diagram for sample test according to  
DIN VDE 0884  
Rev. A4, 11–Jan–99  
89  

与4N25GV相关器件

型号 品牌 描述 获取价格 数据表
4N25GVS ETC NPN-OUTPUT DC-INPUT OPTOCOUPLER

获取价格

4N25GVSERIES VISHAY Optocoupler with Phototransistor Output

获取价格

4N25M LITEON GENERAL PURPOSE TYPE PHOTOCOUPLER

获取价格

4N25M FAIRCHILD General Purpose 6-Pin Phototransistor Optocouplers

获取价格

4N25M ONSEMI 6 引脚 DIP 封装光电晶体管输出光耦合器

获取价格

4N25-M FAIRCHILD GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

获取价格