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4N25GV PDF预览

4N25GV

更新时间: 2024-01-24 22:54:05
品牌 Logo 应用领域
威世 - VISHAY 晶体光电晶体管光电晶体管
页数 文件大小 规格书
9页 150K
描述
Optocoupler with Phototransistor Output

4N25GV 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:unknown
HTS代码:8541.40.80.00风险等级:5.11
其他特性:UL RECOGNIZED, VDE APPROVEDColl-Emtr Bkdn Voltage-Min:30 V
配置:SINGLE当前传输比率-最小值:20%
标称电流传输比:20%最大暗电源:50 nA
最大正向电流:0.06 A最大正向电压:1.5 V
最大绝缘电压:5300 V安装特点:SURFACE MOUNT
元件数量:1最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散:0.16 W子类别:Optocoupler - Transistor Outputs
表面贴装:YESBase Number Matches:1

4N25GV 数据手册

 浏览型号4N25GV的Datasheet PDF文件第1页浏览型号4N25GV的Datasheet PDF文件第3页浏览型号4N25GV的Datasheet PDF文件第4页浏览型号4N25GV的Datasheet PDF文件第5页浏览型号4N25GV的Datasheet PDF文件第6页浏览型号4N25GV的Datasheet PDF文件第7页 
4N25(G)V/ 4N35(G)V Series  
Vishay Telefunken  
Features  
Approvals:  
Rated recurring peak voltage (repetitive)  
V
= 600 V  
IORM  
RMS  
BSI: BS EN 41003, BS EN 60095 (BS 415),  
BS EN 60950 (BS 7002),  
Certificate number 7081 and 7402  
Creepage current resistance according to  
VDE 0303/IEC 112  
Comparative Tracking Index: CTI = 275  
FIMKO (SETI): EN 60950,  
Certificate number 12399  
Thickness through insulation 0.75 mm  
Underwriters Laboratory (UL) 1577 recognized,  
file number E-76222  
General features:  
Isolation materials according to UL94-VO  
VDE 0884, Certificate number 94778  
Pollution degree 2  
(DIN/VDE 0110 part 1 resp. IEC 664)  
VDE 0884 related features:  
Climatic classification 55/100/21 (IEC 68 part 1)  
Rated impulse voltage (transient overvoltage)  
V
IOTM  
= 6 kV peak  
Special construction:  
Therefore, extra low coupling capacity of  
typical 0.2 pF, high Common Mode Rejection  
Isolation test voltage  
(partial discharge test voltage) V = 1.6 kV  
pd  
Low temperature coefficient of CTR  
Coupling System A  
Rated isolation voltage (RMS includes DC)  
V
IOWM  
= 600 V  
(848 V peak)  
RMS  
Absolute Maximum Ratings  
Input (Emitter)  
Parameter  
Reverse voltage  
Forward current  
Forward surge current  
Power dissipation  
Test Conditions  
Symbol  
Value  
5
60  
3
100  
125  
Unit  
V
mA  
A
mW  
°C  
V
R
I
F
t 10 s  
I
p
FSM  
T
amb  
25°C  
P
V
Junction temperature  
T
j
Output (Detector)  
Parameter  
Collector emitter voltage  
Emitter collector voltage  
Collector current  
Collector peak current  
Power dissipation  
Test Conditions  
Symbol  
Value  
32  
7
Unit  
V
V
mA  
mA  
mW  
°C  
V
V
CEO  
CEO  
I
C
50  
t /T = 0.5, t 10 ms  
I
100  
150  
125  
p
p
CM  
T
amb  
25°C  
P
V
T
j
Junction temperature  
Coupler  
Parameter  
Test Conditions  
t = 1 min  
25°C  
Symbol  
Value  
3.75  
250  
Unit  
kV  
mW  
°C  
°C  
°C  
Isolation test voltage (RMS)  
Total power dissipation  
Ambient temperature range  
Storage temperature range  
Soldering temperature  
V
IO  
P
tot  
T
amb  
T
–55 to +100  
–55 to +125  
260  
amb  
T
stg  
2 mm from case, t 10 s  
T
sd  
Rev. A4, 11–Jan–99  
87  

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