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48SD6404RPFE PDF预览

48SD6404RPFE

更新时间: 2024-01-28 22:38:22
品牌 Logo 应用领域
麦斯威 - MAXWELL 动态存储器
页数 文件大小 规格书
42页 595K
描述
256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks

48SD6404RPFE 技术参数

生命周期:Contact Manufacturer零件包装代码:DFP
包装说明:DFP,针数:72
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.24风险等级:5.33
Is Samacsys:N访问模式:FOUR BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-XDFP-F72长度:26.67 mm
内存密度:268435456 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:72
字数:67108864 words字数代码:64000000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:64MX4
封装主体材料:UNSPECIFIED封装代码:DFP
封装形状:RECTANGULAR封装形式:FLATPACK
认证状态:Not Qualified座面最大高度:4.16 mm
自我刷新:YES最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:FLAT
端子节距:0.635 mm端子位置:DUAL
宽度:19 mmBase Number Matches:1

48SD6404RPFE 数据手册

 浏览型号48SD6404RPFE的Datasheet PDF文件第4页浏览型号48SD6404RPFE的Datasheet PDF文件第5页浏览型号48SD6404RPFE的Datasheet PDF文件第6页浏览型号48SD6404RPFE的Datasheet PDF文件第8页浏览型号48SD6404RPFE的Datasheet PDF文件第9页浏览型号48SD6404RPFE的Datasheet PDF文件第10页 
48SD6404  
256Mb (16-Meg X 4-Bit X 4-Banks) SDRAM  
Pin Functions:  
CLK (INPUT PIN): CLK is the master clock input to this pin. The other input signals are referred at CLK rising  
edge.  
CS (INPUT PIN): When CS is Low, the command input cycle becomes valid. When CS is High, all inputs are  
ignored. However, internal operations (bank active, burst operations, etc.) are held.  
RAS, CAS AND WE (INPUT PINS): Although these pin names are the same as those of conventional DRAMs,  
they function in a different way. These pins define operation commands (read, write, etc.) depending on the  
combination of their voltage levels. For details, refer to the command operations section.  
A0 TO A12 (INPUT PINS): Row address (AX0 to AX12) is determined by A0 to A12 level at the bank active  
command cycle CLK rising edge. Column address (AY0 to AY9, A11) is determined by A0 to A9, A11 level at  
the read or write command cycle CLK rising edge. And this column address becomes burst access start  
address. A10 defines the precharge mode. When A10 = High at the precharge command cycle, all banks  
are pre-charged. But when A10 = Low at the precharge command cycle, only the bank that is selected by  
BA0/BA1 (BS) is pre charged. For details refer to the command operation section.  
BA0/BA1 (INPUT PINS): BA0/BA1 are bank select signals (BS). The memory array of the 48SD6404 is divided  
into bank 0, bank 1, bank 2 and bank 3. The 48SD6404 contains 8192-row X 2048-column X 4-bit. If BA0  
and BA1 is Low, bank 0 is selected. If BA0 is Low and BA1 is High, bank 1 is selected. If BA0 is High and  
BA1 is Low, bank 2 is selected. If BAO is High and BA1 is High, bank 3 is selected.  
CKE (INPUT PIN): This pin determines whether or not the next CLK is valid. If CKE is High, the next CLK rising  
edge is valid. If CKE is Low, the next CLK rising edge is invalid. This pin is used for power-down mode,  
clock suspend mode and self refresh mode.1  
DQM (INPUT PIN): DQM control input/output buffers  
Read operation: If DQM is High, the output buffer becomes High-Z. If the DQM is Low, the output buffer  
becomes Low-Z. ( The latency of DQM during reading is 2 clock cycles.)  
Write operation: If DQM is High, the previous data is held ( the new data is not written). If the DQM is Low,  
the data is written. ( The latency of DQM during writing is 0 clock cycles.)  
DQ0 TO DQ3 (DQ PINS): Data is input to and output from these pins ( DQ0 to DQ3).  
V
AND V Q (POWER SUPPLY PINS): 3.3V is applied. ( V is for the internal circuit and V Q is for the output  
CC CC CC  
CC  
buffer.)  
V
AND V Q (POWER SUPPLY PINS): Ground is connected. (V is for the internal circuit and V Q is for the  
SS SS SS  
SS  
output buffer.  
1. Self Refresh should only be used at temperatures below 70 °C  
01.11.05 Rev 2  
All data sheets are subject to change without notice  
7
©2005 Maxwell Technologies  
All rights reserved.  

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