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48SD6404RPFE PDF预览

48SD6404RPFE

更新时间: 2024-01-25 11:31:07
品牌 Logo 应用领域
麦斯威 - MAXWELL 动态存储器
页数 文件大小 规格书
42页 595K
描述
256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks

48SD6404RPFE 技术参数

生命周期:Contact Manufacturer零件包装代码:DFP
包装说明:DFP,针数:72
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.24风险等级:5.33
Is Samacsys:N访问模式:FOUR BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-XDFP-F72长度:26.67 mm
内存密度:268435456 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:72
字数:67108864 words字数代码:64000000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:64MX4
封装主体材料:UNSPECIFIED封装代码:DFP
封装形状:RECTANGULAR封装形式:FLATPACK
认证状态:Not Qualified座面最大高度:4.16 mm
自我刷新:YES最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:FLAT
端子节距:0.635 mm端子位置:DUAL
宽度:19 mmBase Number Matches:1

48SD6404RPFE 数据手册

 浏览型号48SD6404RPFE的Datasheet PDF文件第1页浏览型号48SD6404RPFE的Datasheet PDF文件第2页浏览型号48SD6404RPFE的Datasheet PDF文件第3页浏览型号48SD6404RPFE的Datasheet PDF文件第5页浏览型号48SD6404RPFE的Datasheet PDF文件第6页浏览型号48SD6404RPFE的Datasheet PDF文件第7页 
48SD6404  
256Mb (16-Meg X 4-Bit X 4-Banks) SDRAM  
TABLE 4. DC ELECTRICAL CHARACTERISTICS  
(V = 3.3V + 0.3V, V Q = 3.3V + 0.3V, T = -55 TO 125°C, UNLESS OTHERWISE SPECIFIED)  
CC  
CC  
A
PARAMETER  
SYMBOL  
TEST CONDITIONS  
SUBGROUPS  
MIN  
MAX  
UNITS  
Standby Current in Power Down  
( input signal stable)5  
ICC2PS  
CKE = V  
tCK = 0  
1, 2, 3  
2
mA  
IL  
Standby Current in non power down6  
ICC2N  
ICC2NS  
ICC3P  
CKE, CS = V  
tCK = 12 ns  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
20  
9
mA  
mA  
mA  
mA  
mA  
mA  
mA  
IH  
Standby Current in non power down  
( Input signal stable)7  
CKE = V  
IH  
tCK = 0  
Active standby current in  
power down1, 2, 4  
CKE = V  
4
IL  
tCK = 12 ns  
Active standby current in power down  
(input signal stable)2,5  
ICC3PS  
ICC3N  
ICC3NS  
ICC4  
CKE = V  
3
IL  
tCK = 0  
Active standby power in  
non power down1, 2, 6  
CKE, CS = V  
30  
15  
IH  
tCK = 12 ns  
Active standby current in non power  
down ( input signal stable)2,7  
Burst Operating Current11, 2,8  
CAS Latency = 2  
CKE = V  
IH  
tCK = 0  
tCK = min  
BL = 4  
110  
145  
CAS Latency = 3  
Refresh Current3  
Self Refresh current9  
ICC5  
ICC6  
tRC = min  
1, 2, 3  
1, 2, 3  
220  
3
mA  
mA  
V >V - 0.2V  
IH CC  
V < 0.2 V  
IL  
Input Leakage Current  
Output Leakage Current  
Output high voltage  
Output low voltage  
ILI  
0<V <V  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
-1  
1
uA  
uA  
V
IN CC  
ILO  
0<VOUT<V  
-1.5  
2.4  
1.5  
CC  
V
IOH = -4mA  
IOL = 4 mA  
OH  
V
0.4  
V
OL  
1. ICC1 depends on output load conditions when the device is selected. ICC1 (max) is specified with the output open.  
2. One bank operation.  
3. Input signals are changed once per one clock.  
4. After power down mode, CLK operating current.  
5. After power down mode, no CLK operating current.  
6. Input signals are changed once per two clocks.  
7. Input signals are VIH or VIL fixed.  
8. Input signals are changed once per four clocks.  
9. After self refresh mode set, self refresh current. Self refresh should only be used at temperatures below 70°C.  
01.11.05 Rev 2  
All data sheets are subject to change without notice  
4
©2005 Maxwell Technologies  
All rights reserved.  

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