Datasheet > 48F4268

48F4268

更新时间： 2024-10-02 23:21:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	177K
描述
TRANSISTOR MOSFET TO-220

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SEMICONDUCTOR TECHNICAL DATA

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

This advanced high–cell density HDTMOS power FET is

designed to withstand high energy in the avalanche and commuta-

tion modes. This new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for low

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating area are critical and offer additional safety margin

against unexpected voltage transients.

75 AMPERES

30 VOLTS

= 0.0065 OHM

DS(on)

•

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable

to a Discrete Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V

Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Vdc

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

Gate–to–Source Voltage — Continuous

— Non–Repetitive (t ≤ 10 ms)

± 20

Vdc

Vpk

GSM

Drain Current — Continuous

— Continuous @ 100°C

— Single Pulse (t ≤ 10 µs)

225

Adc

Apk

Total Power Dissipation

Derate above 25°C

150

1.2

Watts

W/°C

Operating and Storage Temperature Range

T , T

J stg

–55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 25 Vdc, V

= 10 Vdc, Peak I = 75 Apk, L = 0.1 mH, R = 25 Ω)

GS L G

280

Thermal Resistance — Junction–to–Case

— Junction–to–Ambient

0.8

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5.0 seconds

260

This document contains information on a new product. Specifications and information herein are subject to change without notice.

E–FET and HDTMOS are trademarks of Motorola, Inc.

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1997

12 3 4 5 6 7 8

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