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45LR60M PDF预览

45LR60M

更新时间: 2024-01-21 22:01:31
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管
页数 文件大小 规格书
8页 87K
描述
Rectifier Diode, 1 Phase, 1 Element, 150A, 600V V(RRM), Silicon, DO-205AC,

45LR60M 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:O-MUPM-H1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.57应用:GENERAL PURPOSE
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.33 VJEDEC-95代码:DO-205AC
JESD-30 代码:O-MUPM-H1最大非重复峰值正向电流:3140 A
元件数量:1相数:1
端子数量:1最大输出电流:150 A
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT认证状态:Not Qualified
最大重复峰值反向电压:600 V子类别:Rectifier Diodes
表面贴装:NO端子形式:HIGH CURRENT CABLE
端子位置:UPPERBase Number Matches:1

45LR60M 数据手册

 浏览型号45LR60M的Datasheet PDF文件第1页浏览型号45LR60M的Datasheet PDF文件第3页浏览型号45LR60M的Datasheet PDF文件第4页浏览型号45LR60M的Datasheet PDF文件第5页浏览型号45LR60M的Datasheet PDF文件第6页浏览型号45LR60M的Datasheet PDF文件第7页 
45L(R), 150K/ L/ KS(R) Series  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
Code  
VRRM , maximum repetitive  
VRSM , maximum non-  
IRRM max.  
Type number**  
peak reverse voltage  
V
repetitive peak rev. voltage  
V
@ TJ = 175°C  
mA  
5
10  
20  
30  
40  
60  
80  
100  
50  
100  
200  
300  
400  
600  
800  
1000  
100  
200  
300  
400  
500  
720  
960  
1200  
35  
35  
35  
35  
35  
35  
32  
24  
45L(R) *  
150K(R)  
150L(R)  
150KS(R)  
* 45L 50V and 300V VRRM classes are not available.  
**Also available as JEDEC series 1N3288A through 1N3296A (DO-8 case style) and 1N3111 through 1N3092 (DO-30 case style)  
Forward Conduction  
Parameter  
45L /150...  
Units Conditions  
IF(AV) Max. average forward current  
@ Case temperature  
150  
150  
235  
A
°C  
A
180° conduction, half sine wave  
IF(RMS) Max. RMS forward current  
DC @ 142°C case temperature  
IFSM  
Max. peak, one-cycle forward,  
non-repetitive surge current  
3570  
3740  
3000  
3140  
64  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
No voltage  
reapplied  
A
100% VRRM  
reapplied  
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
No voltage  
reapplied  
58  
KA2s  
45  
100% VRRM  
reapplied  
41  
I2t  
Maximum I2t for fusing  
640  
KA2s t = 0.1 to 10ms, no voltage reapplied  
VF(TO)1 Low level value of threshold  
0.67  
0.83  
1.42  
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.  
voltage  
V
VF(TO)2 High level value of threshold  
voltage  
(I > x π x IF(AV)),TJ = TJ max.  
r
Low level value of forward  
slope resistance  
1
f
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.  
mΩ  
r
High level value of forward  
slope resistance  
2
f
0.91  
1.33  
(I > x π x IF(AV)),TJ = TJ max.  
VFM  
Max. forward voltage drop  
V
I = 471A, TJ = 25°C, t = 10ms sinusoidal wave  
pk p  

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