AT45DB011
DC Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Units
CS, RESET, WP = VIH, all inputs
at CMOS levels
ISB
Standby Current
2
10
µA
Active Current, Read
Operation
f = 13 MHz; IOUT = 0 mA;
VCC = 3.6V
ICC1
4
10
25
mA
mA
Active Current, Program/Erase
Operation
ICC2
VCC = 3.6V
10
ILI
Input Load Current
Output Leakage Current
Input Low Voltage
VIN = CMOS levels
VI/O = CMOS levels
1
1
µA
µA
V
ILO
VIL
VIH
VOL
VOH
0.6
Input High Voltage
Output Low Voltage
Output High Voltage
2.0
V
IOL = 1.6 mA; VCC = 2.7V
0.4
V
IOH = -100 µA
VCC - 0.2V
V
AC Characteristics
Symbol
fSCK
tWH
tWL
Parameter
Min
Typ
Max
Units
SCK Frequency
13
MHz
ns
SCK High Time
35
35
SCK Low Time
ns
tCS
Minimum CS High Time
CS Setup Time
250
250
250
ns
tCSS
tCSH
tCSB
tSU
ns
CS Hold Time
ns
CS High to RDY/BUSY Low
Data In Setup Time
Data In Hold Time
200
ns
10
20
0
ns
tH
ns
tHO
Output Hold Time
ns
tDIS
tV
tXFR
tEP
Output Disable Time
Output Valid
25
30
ns
ns
Page to Buffer Transfer/Compare Time
Page Erase and Programming Time
Page Programming Time
Page Erase Time
120
10
7
200
20
µs
ms
ms
ms
ms
µs
µs
tP
15
tPE
6
10
tBE
Block Erase Time
7
15
tRST
tREC
RESET Pulse Width
RESET Recovery Time
10
1
Input Test Waveforms and
Measurement Levels
2.4V
Output Test Load
DEVICE
UNDER
TEST
AC
AC
2.0
DRIVING
LEVELS
MEASUREMENT
LEVEL
30 pF
0.8
0.45V
tR, tF < 5 ns (10% to 90%)
7