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4283-00

更新时间: 2024-09-28 02:56:15
品牌 Logo 应用领域
PSEMI 开关射频开关光电二极管
页数 文件大小 规格书
11页 230K
描述
SPDT High Power UltraCMOS⑩ DC - 4.0 GHz RF Switch

4283-00 数据手册

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Product Specification  
PE4283  
SPDT High Power UltraCMOS™  
DC – 4.0 GHz RF Switch  
Product Description  
The PE4283 RF Switch is designed to cover a broad range  
of applications from DC through 4000 MHz. This reflective  
switch integrates on-board CMOS control logic with a low  
voltage CMOS-compatible control interface, and can be  
controlled using either single-pin or complementary control  
inputs. The PE4283 operates using a +3 volt power supply.  
Features  
Single-pin or complementary CMOS  
logic control inputs  
1.5 kV ESD tolerance  
Low insertion loss: 0.65 dB at  
1000 MHz, 0.70 dB at 2500 MHz  
The PE4283 SPDT High Power RF Switch is manufactured  
on Peregrine’s UltraCMOS™ process, a patented variation  
of silicon-on-insulator (SOI) technology on a sapphire  
substrate, offering the performance of GaAs with the  
economy and integration of conventional CMOS.  
RFC-RF1/RF2 isolation of 33.5 dB at  
1000 MHz, 21.5 dB at 2500 MHz  
RF1-RF2 isolation of 37.5 dB at  
1000 MHz, 22 dB at 2500 MHz  
Typical input 1 dB compression point  
of +32 dBm  
Figure 1. Functional Diagram  
Ultra-small SC-70 package  
RFC  
Figure 2. Package Type SC-70  
6-lead SC-70  
RF1  
RF2  
CMOS  
Control  
Driver  
V1  
V2  
Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 50 )  
Parameter  
Conditions  
Typical  
Units  
Min  
Max  
Operation Frequency1  
DC - 4000  
DC  
4000  
MHz  
1000 MHz  
2500 MHz  
0.65  
0.70  
0.75  
0.80  
dB  
dB  
Insertion Loss  
1000 MHz  
2500 MHz  
31.5  
19.5  
33.5  
21.5  
dB  
dB  
Isolation: RFC - RF1/RF2  
1000 MHz  
2500 MHz  
35.5  
20  
37.5  
22  
dB  
dB  
Isolation: RF1 - RF2  
Return Loss  
1000 MHz  
2500 MHz  
19  
16  
dB  
dB  
‘ON’ Switching Time  
‘OFF’ Switching Time  
Input 1 dB Compression  
Input IP3  
50% CTRL to 0.1 dB of final value, 1 GHz  
50% CTRL to 25 dB isolation, 1 GHz  
1000 MHz  
0.725  
0.625  
+32  
1.5  
1.3  
µs  
µs  
30  
dBm  
dBm  
1000 MHz, 20 dBm input power  
+53  
Note: 1. Device linearity will begin to degrade below 10 MHz.  
Document No. 70-0177-04 www.psemi.com  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Page 1 of 11  

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