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4231-02

更新时间： 2024-02-15 22:56:47
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PSEMI 开关光电二极管
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7页 272K
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SPDT High Power UltraCMOS - DC 1.3 GHz RF Switch

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Product Specification  
PE4231  
SPDT High Power UltraCMOS™  
Product Description  
DC – 1.3 GHz RF Switch  
The PE4231 SPDT High Power UltraCMOS™ RF Switch is  
designed to cover a broad range of applications from DC to 1.3  
GHz. This single-supply reflective switch integrates on-board  
CMOS control logic driven by a simple, single-pin CMOS or  
TTL compatible control input. Using a nominal +3-volt power  
supply, a typical input 1 dB compression point of +32 dBm can  
be achieved. The PE4231 also exhibits input-output isolation of  
better than 42 dB at 1.0 GHz and is offered in a small 8-lead  
MSOP package.  
Features  
• Optimized for 75 Ω systems  
• Single +3-volt power supply  
• Low insertion loss: 0.80 dB at 1.0 GHz  
• High isolation: 42 dB at 1.0 GHz  
• Typical input 1 dB compression point of  
+32 dBm  
• Single-pin CMOS or TTL logic control  
• Low cost  
The PE4231 SPDT High Power UltraCMOS™ RF Switch is  
manufactured in Peregrine’s patented Ultra Thin Silicon  
(UTSi®) CMOS process, offering the performance of GaAs with  
the economy and integration of conventional CMOS.  
Figure 2. Package Type  
Figure 1. Functional Diagram  
8-lead MSOP  
RFCommon  
RF1  
RF2  
CMOS  
Control  
Driver  
CTRL  
Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 75 ꢀ)  
Parameter  
Conditions  
Minimum  
Typical  
Maximum  
Units  
Operation Frequency1  
DC  
1300  
0.60  
0.90  
MHz  
50 MHz  
0.50  
Insertion Loss  
dB  
dB  
dB  
1000 MHz  
50 MHz  
0.80  
75  
73  
Isolation – RFCommon to  
RF1/RF2  
1000 MHz  
50 MHz  
40  
58  
42  
60  
Isolation – RF1 to RF2  
1000 MHz  
1000 MHz  
33  
16  
35  
17  
Return Loss  
dB  
ns  
‘ON’ Switching Time  
‘OFF’ Switching Time  
Video Feedthrough2  
Input 1 dB Compression3  
Input IP33  
CTRL to 0.1 dB final value, 2 GHz  
CTRL to 25 dB isolation, 2 GHz  
2000  
900  
15  
ns  
mVpp  
dBm  
dBm  
1000 MHz  
30  
50  
32  
1000 MHz, 17 dBm  
Notes:  
1. Device linearity will begin to degrade below 1 MHz.  
2. Measured with a 1 ns risetime, 0/3 V pulse and 500 MHz bandwidth.  
3. Measured in a 50 ꢀ system.  
Document No. 70-0097-01 │ www.psemi.com  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Page 1 of 7  
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