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3KASMC43AHE3_A/H

更新时间： 2024-02-17 15:50:54
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
5页 89K
描述
Trans Voltage Suppressor Diode, 3000W, 43V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

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3KASMC43AHE3_A/H 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DO-214AB
包装说明：ROHS COMPLIANT, PLASTIC, SMC, 2 PIN针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.51
其他特性：EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY最大击穿电压：52.8 V
最小击穿电压：47.8 V击穿电压标称值：50.3 V
最大钳位电压：69.4 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214ABJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：3000 W元件数量：1
端子数量：2最高工作温度：185 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性：UNIDIRECTIONAL
最大功率耗散：6 W参考标准：AEC-Q101
最大重复峰值反向电压：43 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：30
Base Number Matches：1

3KASMC43AHE3_A/H 数据手册

 浏览型号3KASMC43AHE3_A/H的Datasheet PDF文件第2页浏览型号3KASMC43AHE3_A/H的Datasheet PDF文件第3页浏览型号3KASMC43AHE3_A/H的Datasheet PDF文件第4页浏览型号3KASMC43AHE3_A/H的Datasheet PDF文件第5页 
3KASMC10 thru 3KASMC43A  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design  
passivated anisotropic rectifier technology  
• TJ = 185 °C capability suitable for high  
reliability and automotive requirement  
• Available in uni-directional polarity only  
• 3000 W peak pulse power capability with a  
10/1000 μs waveform  
• Excellent clamping capability  
• Very fast response time  
DO-214AB (SMC)  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
VWM  
10 V to 43 V  
VBR  
11.1 V to 52.8 V  
3000 W  
PPPM  
PD  
6.0 W  
IFSM  
200 A  
MECHANICAL DATA  
TJ max.  
Polarity  
Package  
185 °C  
Case: DO-214AB (SMC)  
Uni-directional  
DO-214AB (SMC)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“X” denotes revision code e.g. A, B, ..., revision code only  
applicable for part number with 5 % tolerance)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
3000  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 3)  
Peak power pulse current with a 10/1000 μs waveform (1) (fig. 1)  
Peak forward surge current 8.3 ms single half sine-wave (2)  
Power dissipation on infinite heatsink, TL = 75 °C (fig. 6)  
Maximum instantaneous forward voltage at 100 A (2)  
Operating junction and storage temperature range  
See next table  
200  
A
IFSM  
A
PD  
6.0  
W
VF  
3.5  
V
TJ, TSTG  
-65 to +185  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.  
Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(2)  
Revision: 22-Jul-16  
Document Number: 88480  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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