Datasheet > 3DD523

3DD523

更新时间： 2024-01-16 15:22:23

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	132K
描述
Silicon NPN Power Transistor

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中文翻译

获取价格

技术参数
数据手册

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3DD523 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

3DD523 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistor

3DD523

DESCRIPTION

·With TO-3 package

·DC Current Gain -h_FE= 20–70 @ I_C= 4 Adc

·Collector–Emitter Saturation Voltage -

_CE(sat)= 1.1 Vdc (Max) @ I_C= 4 Adc

·Excellent Safe Operating Area

APPLICATIONS

·Designed for general–purpose switching

and amplifier applications.

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

150

UNIT

Open base

150

Open collector

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

100

℃

T_j

150

T_stg

-65~200

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

VALUE

UNIT

R_{th j-c}

1.52

℃/W

12 3

中文翻译

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