Datasheet > 3A17D

3A17D

更新时间： 2022-09-18 18:06:17

品牌	Logo	应用领域
捷特科 - ZETEX		/
页数	文件大小	规格书
7页	119K
描述
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET

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3A17D 数据手册

ZXMP3A17DN8

ELECTRICAL CHARACTERISTICS (at T_{am b}= 25°C unless otherwise stated).

PARAMETER

S YMBOL

MIN.

TYP.

MAX. UNIT CONDITIONS .

S TATIC

Dra in -S o u rce Bre a kd o w n Vo lta g e

Ze ro Ga te Vo lta g e Dra in Cu rre n t

Ga te -Bo d y Le a ka g e

-30

␮A

n A

=-250µA, V =0V

(BR)DS S

-1.0

100

=-30V, V =0V

DS S

DS GS

=Ϯ20V, V =0V

GS S

Ga te -S o u rce Th re s h o ld Vo lta g e

-1.0

=-250␮A, V = V

DS GS

GS (th )

S ta tic Dra in -S o u rce On -S ta te Re s is ta n ce

(1)

0.070

0.110

=-10V, I =-3.2A

=-4.5V, I =-2.5A

⍀

DS (o n )

Fo rw a rd Tra n s co n d u cta n ce (1)(3)

DYNAMIC (3)

6.4

=-15V,I =-3.2A

In p u t Ca p a cita n ce

Ou tp u t Ca p a cita n ce

Re ve rs e Tra n s fe r Ca p a cita n ce

S WITCHING(2) (3)

Tu rn -On De la y Tim e

Ris e Tim e

630

113

p F

is s

=-15 V, V =0V,

o s s

rs s

f=1MHz

1.74

2.87

29.2

8.72

8.28

n s

n C

d (o n )

=-15V, I =-1A

=6.0Ω, V =-10V

Tu rn -Off De la y Tim e

Fa ll Tim e

d (o ff)

Ga te Ch a rg e

=-15V,V =-5V,

=-3.2A

To ta l Ga te Ch a rg e

15.8

1.84

2.80

n C

=-15V,V =-10V,

Ga te -S o u rce Ch a rg e

Ga te -Dra in Ch a rg e

g s

g d

=-3.2A

S OURCE-DRAIN DIODE

Dio d e Fo rw a rd Vo lta g e (1)

-0.85

-1.2

T =25°C, I =-2.5A,

J S

S D

=0V

Re ve rs e Re co ve ry Tim e (3)

Re ve rs e Re co ve ry Ch a rg e (3)

19.5

16.3

n s

T =25°C, I =-1.7A,

d i/d t= 100A/µs

n C

NOTES

(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction tem perature.

(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - AUGUST 2002

1 2 345 6 7

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