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37LV65-P PDF预览

37LV65-P

更新时间: 2024-02-16 02:47:08
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器OTP只读存储器电动程控只读存储器时钟
页数 文件大小 规格书
12页 92K
描述
36K, 64K, and 128K Serial EPROM Family

37LV65-P 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.92Is Samacsys:N
最大时钟频率 (fCLK):10 MHzI/O 类型:COMMON
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm内存密度:65536 bit
内存集成电路类型:OTP ROM内存宽度:32
功能数量:1端子数量:8
字数:2048 words字数代码:2000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2KX32
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL电源:3.3/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
最大待机电流:0.00005 A子类别:Other Memory ICs
最大压摆率:0.01 mA最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.6 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
Base Number Matches:1

37LV65-P 数据手册

 浏览型号37LV65-P的Datasheet PDF文件第4页浏览型号37LV65-P的Datasheet PDF文件第5页浏览型号37LV65-P的Datasheet PDF文件第6页浏览型号37LV65-P的Datasheet PDF文件第8页浏览型号37LV65-P的Datasheet PDF文件第9页浏览型号37LV65-P的Datasheet PDF文件第10页 
37LV36/65/128  
TABLE 11-4: DC PROGRAMMING SPECIFICATIONS  
Limits  
Units  
Symbol  
Parameter  
Ambient Temperature: Tamb = 25°C ±5°C  
Min.  
Max.  
VCCP  
VIL  
Supply voltage during programming  
Low-level input voltage  
5.0  
0.0  
2.4  
6.0  
0.5  
V
V
VIH  
High-level input voltage  
VCC  
0.4  
V
VOL  
VOH  
VPP1  
VPP2  
IPPP  
IL  
Low-level output voltage  
V
High-level output voltage  
3.7  
12.5  
VCCP  
V
Programming voltage*  
13.5  
VCCP+1  
100  
10  
V
Programming Mode access voltage  
Supply current in Programming Mode  
Input or output leakage current  
First pass Low-level supply voltage for final verification  
Second pass High-level supply voltage for final verification  
V
mA  
µA  
V
-10  
2.8  
6.4  
VCCL  
VCCH  
3.0  
6.6  
V
* No overshoot is permitted on this signal. VPP must not be allowed to exceed 14 volts.  
TABLE 11-5: AC PROGRAMMING SPECIFICATIONS (SEE NOTE 2)  
Limits  
Max.  
Symbol  
Parameter  
Units  
Conditions  
Min.  
TRPP  
TFPP  
TPGM  
TSVC  
TSVCE  
TSVOE  
THVC  
TSDP  
THDP  
TLCE  
TSCC  
TSIC  
10% to 90% Rise Time of VPP  
1
µs  
µs  
ms  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Note 1  
Note 1  
90% to 10% Fall Time of VPP  
1
VPP Programming Pulse Width  
.50  
100  
100  
100  
300  
50  
1.05  
VPP Setup to CLK for Entering Programming Mode  
CE Setup to CLK for Entering Programming Mode  
OE Setup to CLK for Entering Programming Mode  
VPP Hold from CLK for Entering Programming Mode  
Data Setup to CLK for Programming  
Data Hold from CLK for Programming  
CE Low time to clear data latches  
Note 1  
Note 1  
Note 1  
Note 1  
0
100  
100  
100  
0
CE Setup to CLK for Programming/Verifying  
OE Setup to CLK for Incrementing Address Counter  
OE Hold from CLK for Incrementing Address Counter  
OE Hold from VPP  
THIC  
THOV  
TPCAC  
TPOH  
TPCE  
200  
Note 1  
CLK to Data Valid  
400  
250  
Data Hold from CLK  
0
CE Low to Data Valid  
Note 1: This parameter is periodically sampled and not 100% tested.  
Note 2: While in Programming Mode, CE should only be changed while OE is HIGH and has been HIGH for 200 ns,  
and OE should only be changed while CE is HIGH and has been HIGH for 200 ns.  
1996 Microchip Technology Inc.  
DS21109E-page 7  

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