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37LV128-P PDF预览

37LV128-P

更新时间: 2024-01-04 19:38:34
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器OTP只读存储器电动程控只读存储器时钟
页数 文件大小 规格书
12页 92K
描述
36K, 64K, and 128K Serial EPROM Family

37LV128-P 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.91最大时钟频率 (fCLK):10 MHz
I/O 类型:COMMONJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:4.9 mm
内存密度:131072 bit内存集成电路类型:OTP ROM
内存宽度:32功能数量:1
端子数量:8字数:4096 words
字数代码:4000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4KX32输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
电源:3.3/5 V认证状态:Not Qualified
座面最大高度:1.75 mm最大待机电流:0.00005 A
子类别:Other Memory ICs最大压摆率:0.01 mA
最大供电电压 (Vsup):6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.6 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mmBase Number Matches:1

37LV128-P 数据手册

 浏览型号37LV128-P的Datasheet PDF文件第1页浏览型号37LV128-P的Datasheet PDF文件第2页浏览型号37LV128-P的Datasheet PDF文件第4页浏览型号37LV128-P的Datasheet PDF文件第5页浏览型号37LV128-P的Datasheet PDF文件第6页浏览型号37LV128-P的Datasheet PDF文件第7页 
37LV36/65/128  
2.0  
DATA  
8.0  
CASCADING SERIAL EPROMS  
Cascading Serial EPROMs provide additional memory  
for multiple FPGAs configured as a daisy-chain, or for  
future applications requiring larger configuration mem-  
ories.  
2.1  
Data I/O  
Three-state DATA output for reading and input during  
programming.  
When the last bit from the first Serial EPROM is read,  
the next clock signal to the Serial EPROM asserts its  
CEO output LOW and disables its DATA line. The sec-  
ond Serial EPROM recognizes the LOW level on its CE  
input and enables its DATA output.  
3.0  
CLK  
3.1  
Clock Input  
Used to increment the internal address and bit  
counters for reading and programming.  
When configuration is complete, the address counters  
of all cascaded Serial EPROMs are reset if RESET  
goes LOW forcing the RESET/OE on each Serial  
EPROM to go HIGH. If the address counters are not to  
be reset upon completion, then the RESET/OE inputs  
can be tied to ground.  
4.0  
RESET/OE  
4.1  
Reset Input and Output Enable  
A LOW level on both the CE and RESET/OE inputs  
enables the data output driver. A HIGH level on  
RESET/OE resets both the address and bit counters.  
In the 37LVXXX, the logic polarity of this input is pro-  
grammable as either RESET/OE or OE/RESET. This  
document describes the pin as RESET/OE although  
the opposite polarity is also possible. This option is  
defined and set at device program time.  
Additional logic may be required if cascaded memories  
are so large that the rippled chip enable is not fast  
enough to activate successive Serial EPROMs.  
9.0  
STANDBY MODE  
The 37LVXXX enters a low-power Standby Mode  
whenever CE is HIGH. In Standby Mode, the Serial  
EPROM consumes less than 100 µA of current. The  
output will remain in a high-impedance state regardless  
of the state of the OE input.  
5.0  
CE  
5.1  
Chip Enable Input  
10.0 PROGRAMMING MODE  
CE is used for device selection. A LOW level on both  
CE and OE enables the data output driver. A HIGH  
level on CE disables both the address and bit counters  
and forces the device into a low power mode.  
Programming Mode is entered by holding VPP HIGH  
(+13 volts) for two clock edges and then holding VPP =  
VDD for one clock edge. Programming mode is exited  
by driving a LOW on both CE and OE and then remov-  
ing power from the device. Figures 4 through 7 show  
the programming algorithm.  
6.0  
CEO  
6.1  
Chip Enable Output  
11.0 37LVXXX RESET POLARITY  
This signal is asserted LOW on the clock cycle follow-  
ing the last bit read from the memory. It will stay LOW  
as long as CE and OE are both LOW. It will then follow  
CE until OE goes HIGH. Thereafter, CEO will stay  
HIGH until the entire EPROM is read again. This pin  
also used to sense the status of RESET polarity when  
Programming Mode is entered.  
The 37LVXXX lets the user choose the reset polarity as  
either RESET/OE or OE/RESET. Any third-party com-  
mercial programmer should prompt the user for the  
desired reset polarity.  
The programming of the overflow word should be han-  
dled transparently by the EPROM programmer; it is  
mentioned here as supplemental information only.  
7.0  
VPP  
The polarity is programmed into the first overflow word  
location, maximum address+1. 00000000 in these  
locations makes the reset active LOW, FFFFFFFF in  
these locations makes the reset active HIGH. The  
default condition is RESET active HIGH.  
7.1  
Programming Voltage Supply  
Used to enter programming mode (+13 volts) and to  
program the memory (+13 volts). Must be connected  
directly to Vcc for normal Read operation. No over-  
shoot above +14 volts is permitted.  
1996 Microchip Technology Inc.  
DS21109E-page 3  

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