ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions of -40°C ≤ TA ≤ 125°C, unless otherwise stated. Voltages are relative to GND unless
otherwise noted. All positive currents are into the terminal. All negative currents are out of the terminal.
Characteristic
Symbol
Min
Typ
Max
Unit
BUS
Normal Speed Rising Output Delay
tDLYNORMRO
µs
200 Ω ≤ RL ≤ 3332 Ω, 1.0 µs ≤ Load Time Constants ≤ 4.0 µs
Measured from TXD = VIL to VBUS as follows:
2.0
–
6.3
Max Time to VBUSMOD = 3.7 V, 6.0 V ≤ VBATT ≤ 26.5 V (12)
Min Time to VBUSMOD = 1.0 V, 6.0 V ≤ VBATT ≤ 26.5 V (12)
Max Time to VBUSMOD = 2.7 V, VBATT = 5.0 V (12)
Min Time to VBUSMOD = 1.0 V, VBATT = 5.0 V (12)
Normal Speed Falling Output Delay
tDLYNORMFO
µs
200 Ω ≤ RL ≤ 3332 Ω, 1.0 µs ≤ Load Time Constants ≤ 4.0 µs
Measured from TXD = VIH to VBUS as follows:
1.8
–
8.5
Max Time to VBUSMOD = 1.0 V, 6.0 V ≤ VBATT ≤ 26.5 V (12)
Min Time to VBUSMOD = 3.7 V, 6.0 V ≤ VBATT ≤ 26.5 V (12)
Max Time to VBUSMOD = 1.0 V, VBATT = 5.0 V (12)
Min Time to VBUSMOD = 2.7 V, VBATT = 5.0 V (12)
High-Speed Rising Output Delay
tDLYHSRO
µs
75 Ω ≤ RL ≤ 135 Ω, 0.0 µs ≤ Load Time Constants ≤ 1.5 µs,
0.1
–
1.7
8.0 V ≤ V
≤ 16 V
BATT
Measured from TXD = VIL to VBUS as follows:
Max Time to VBUS = 3.7 V (13)
Min Time to VBUS = 1.0 V (13)
High-Speed Falling Output Delay
tDLYHSFO
µs
75 Ω ≤ RL ≤ 135 Ω, 0.0 µs ≤ Load Time Constants ≤ 1.5 µs,
0.04
–
3.0
8.0 V ≤ V
≤ 16 V
BATT
Measured from TXD = VIH to VBUS as follows:
Max Time to VBUS = 1.0 V (13)
Min Time to VBUS = 3.7 V (13)
Notes
12.
13.
V
V
is the voltage at the BUSMOD node in Figure 7, page 15.
BUSMOD
is the voltage at the BUS terminal in Figure 8, page 15.
BUS
33897/A/B/C/D/T
Analog Integrated Circuit Device Data
Freescale Semiconductor
10