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32C408BRPFE-25

更新时间： 2024-01-13 10:26:59

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32C408BRPFE-25 技术参数

32C408B

4 Megabit (512K x 8-Bit) SRAM

(2)

FIGURE 4. TIMING WAVEFORM OF READ CYCLE (WE = V )

1. WE is high for read cycle.

2. All read cycle timing is referenced from the last valid address to the first transition address.

3. t_HZand t_OHZare defined as the time at which the outputs achieve the open circuit condition and are not referenced to V_OHor

V levels.

4. At any given temperature and voltage condition, t_HZ(max)is less than t_LZ(min)both for a given device and from device to device.

5. Transition is measured +200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.

6. Device is continuously selected with CS = V .

7. Address valid prior to coincident with CS transition low.

8. For common I/O applications, minimization or elimination of bus contention is necessary during read and

write cycle.

FIGURE 5. SRAM HEAVY ION CROSS SECTION

05.02.02 Rev 7

All data sheets are subject to change without notice

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型号	品牌	描述	获取价格	数据表
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