VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3
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Vishay Semiconductors
Schottky Rectifier, 3.3 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode
Anode
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation forenhanced mechanical
strength and moisture resistance
C-16
• Guard ring for enhanced ruggedness and
long termreliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
PRODUCT SUMMARY
Package
DO-201AD (C-16)
3.3 A
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
IF(AV)
VR
90 V, 100 V
See Electrical table
3.0 mA at 125 °C
150 °C
VF at IF
DESCRIPTION
I
RM max.
The VS-31DQ..G... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
TJ max.
Diode variation
EAS
Single die
3.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
3.3
UNITS
Rectangular waveform
A
V
90/100
370
tp = 5 μs sine
A
VF
3 Apk, TJ = 25 °C
0.85
V
TJ
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-31DQ09G
VS-31DQ09G-M3
VS-31DQ10G
VS-31DQ10G-M3 UNITS
Maximum DC reverse voltage
VR
90
90
100
100
V
Maximum working peak
reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 53.4 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
See fig. 4
IF(AV)
3.3
A
Maximum peak one cycle
non-repetitive surge current, TJ = 25 °C
See fig. 6
Followinganyratedload
condition and with rated
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
370
IFSM
60
VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 1 A, 18 μs square pulse
3.0
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.5
Revision: 19-Sep-11
Document Number: 93322
1
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