VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3
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Vishay Semiconductors
Schottky Rectifier, 3.3 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode
Anode
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
C-16
• Guard ring for enhanced ruggedness and
long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
PRODUCT SUMMARY
Package
DO-201AD (C-16)
3.3 A
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
IF(AV)
VR
30 V, 40 V
VF at IF
See Electrical table
20 mA at 125 °C
150 °C
DESCRIPTION
I
RM max.
The VS-31DQ... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection
TJ max.
Diode variation
EAS
Single die
6.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
3.3
UNITS
Rectangular waveform
A
V
30/40
450
tp = 5 μs sine
A
VF
3 Apk, TJ = 25 °C
0.57
V
TJ
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-31DQ03
VS-31DQ03-M3
VS-31DQ04
VS-31DQ04-M3 UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
30
30
40
40
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 4
IF(AV)
50 % duty cycle at TL = 117 °C, rectangular waveform
3.3
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
5 µs sine or 3 µs rect. pulse
450
Followinganyratedload
condition and with rated
IFSM
VRRM applied
10 ms sine or 6 ms rect. pulse
90
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 1.0 A, L = 12 mH
6.0
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.0
Revision: 20-Sep-11
Document Number: 93319
1
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