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30CTQ100SPBF PDF预览

30CTQ100SPBF

更新时间: 2024-02-18 04:53:40
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
7页 291K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, PLASTIC, SMD-220, D2PAK-3

30CTQ100SPBF 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.25Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.67 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:850 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

30CTQ100SPBF 数据手册

 浏览型号30CTQ100SPBF的Datasheet PDF文件第1页浏览型号30CTQ100SPBF的Datasheet PDF文件第3页浏览型号30CTQ100SPBF的Datasheet PDF文件第4页浏览型号30CTQ100SPBF的Datasheet PDF文件第5页浏览型号30CTQ100SPBF的Datasheet PDF文件第6页浏览型号30CTQ100SPBF的Datasheet PDF文件第7页 
30CTQ...GS, 30CTQ...G-1  
Preliminary Data Sheet PD-20835 09/04  
Voltage Ratings  
30CTQ80GS  
30CTQ80G-1  
30CTQ100GS  
30CTQ100G-1  
Parameters  
VR  
Max. DC Reverse Voltage (V)  
80  
100  
VRWM Max. Working Peak Reverse Voltage (V)  
Absolute Maximum Ratings  
Parameters  
Values Units  
Conditions  
IF(AV) Max. Average Forward (Per Leg)  
15  
A
50%duty cycle@TC =129°C,rectangular wave form  
Current *SeeFig.5  
IFSM Max. PeakOneCycleNon-Repetitive  
(Per Device)  
30  
850  
275  
Following any rated  
5µs Sineor3µsRect.pulse  
A
load condition and with  
SurgeCurrent (Per Leg) *SeeFig.7  
10msSineor6msRect. pulse rated VRRM applied  
EAS Non-Repetitive Avalanche Energy  
(Per Leg)  
7.50  
mJ TJ = 25°C, IAS = 0.50Amps,L=60mH  
IAR  
Repetitive Avalanche Current  
(Per Leg)  
0.50  
A
Current decaying linearly to zero in 1µsec  
Frequency limited by TJ max.VA =1.5xVR typical  
Electrical Specifications  
Parameters  
Values Units  
Conditions  
VFM Max. Forward Voltage Drop  
0.86  
1.05  
0.69  
0.82  
0.55  
7.0  
V
V
V
@ 15A  
@ 30A  
@ 15A  
TJ = 25 °C  
(Per Leg) * See Fig. 1  
(1)  
TJ = 125 °C  
V
@ 30A  
IRM Max. Reverse Leakage Current  
mA TJ = 25 °C  
mA TJ = 125 °C  
VR = rated VR  
(Per Leg) * See Fig. 2  
(1)  
CT  
LS  
Max. Junction Capacitance(Per Leg)  
Typical Series Inductance (Per Leg)  
500  
8.0  
10000  
pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C  
nH Measured lead to lead 5mm from package body  
V/ µs  
dv/dt Max. Voltage Rate of Change  
(Rated VR)  
(1) Pulse Width < 300µs, Duty Cycle <2%  
Thermal-Mechanical Specifications  
Parameters  
Values Units  
Conditions  
TJ  
Max. Junction Temperature Range  
-55to175  
-55to175  
3.25  
°C  
°C  
Tstg Max. Storage Temperature Range  
RthJC Max. Thermal Resistance Junction  
toCase (Per Leg)  
°C/W DC operation  
RthJC Max. Thermal Resistance Junction  
toCase(Per Package)  
RthCS Typical Thermal Resistance, Case  
toHeatsink  
1.63  
0.50  
°C/W DC operation  
°C/W Mounting surface,smooth and greased  
(only for TO-220)  
wt  
T
Approximate Weight  
Mounting Torque  
2(0.07) g(oz.)  
Min.  
Max.  
6(5)  
Kg-cm  
(Ibf-in)  
12(10)  
Device Marking  
30CTQ...GS  
30CTQ...G-1  
CasestyleD2-Pak  
CasestyleTO-262  
2

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