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2SK1070C PDF预览

2SK1070C

更新时间: 2024-01-06 07:21:50
品牌 Logo 应用领域
其他 - ETC 晶体晶体管光电二极管
页数 文件大小 规格书
5页 25K
描述
TRANSISTOR | JFET | N-CHANNEL | 12MA I(DSS) | SOT-346

2SK1070C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.47配置:SINGLE
最大漏极电流 (ID):0.05 AFET 技术:JUNCTION
JESD-30 代码:R-PDSO-G3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:20
晶体管应用:AMPLIFIER晶体管元件材料:SILICON

2SK1070C 数据手册

 浏览型号2SK1070C的Datasheet PDF文件第1页浏览型号2SK1070C的Datasheet PDF文件第3页浏览型号2SK1070C的Datasheet PDF文件第4页浏览型号2SK1070C的Datasheet PDF文件第5页 
2SK1070  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VGDO  
VGSO  
ID  
Ratings  
–22  
Unit  
V
Gate to drain voltage  
Gate to source voltage  
Drain current  
–22  
V
50  
mA  
mA  
mW  
°C  
Gate current  
IG  
10  
Channel power dissipation  
Channel temperature  
Storage temperature  
Pch  
Tch  
Tstg  
150  
150  
–55 to +150  
°C  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
–10  
Unit  
nA  
V
Test conditions  
Gate cutoff current  
IGSS  
VGS = –15 V, VDS = 0  
IG = –10 µA, VDS = 0  
Gate to source breakdown  
voltage  
V(BR)GSS  
–22  
1
Drain current  
IDSS  
*
6
30  
9
40  
mA  
V
VDS = 5 V, VGS = 0, Pulse test  
Gate to source cutoff voltage  
Forward transfer admittance  
Input capacitance  
VGS(off)  
0
–2.5  
VDS = 5 V, ID = 10 µA  
20  
mS  
pF  
V
DS = 5 V, VGS = 0, f = 1 kHz  
yfs  
Ciss  
VDS = 5 V, VGS = 0, f = 1 MHz  
Note: 1. The 2SK1070 is grouped by IDSS as follows.  
Grade  
Mark  
IDSS  
B
C
D
E
PIB  
PIC  
PID  
PIE  
6 to 14  
12 to 22  
18 to 30  
27 to 40  
See characteristic curves of 2SK435.  
2

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