5秒后页面跳转
2SJ528 PDF预览

2SJ528

更新时间: 2024-02-03 19:39:10
品牌 Logo 应用领域
日立 - HITACHI 开关电源开关
页数 文件大小 规格书
9页 55K
描述
Silicon P Channel MOS FET High Speed Power Switching

2SJ528 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:DPAK(S)针数:4
Reach Compliance Code:compliant风险等级:5.7
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2SJ528 数据手册

 浏览型号2SJ528的Datasheet PDF文件第2页浏览型号2SJ528的Datasheet PDF文件第3页浏览型号2SJ528的Datasheet PDF文件第4页浏览型号2SJ528的Datasheet PDF文件第6页浏览型号2SJ528的Datasheet PDF文件第7页浏览型号2SJ528的Datasheet PDF文件第8页 
2SJ528(L),2SJ528(S)  
Body–Drain Diode Reverse  
Recovery Time  
Typical Capacitance vs.  
Drain to Source Voltage  
5000  
1000  
500  
V
GS  
= 0  
f = 1 MHz  
200  
100  
50  
Ciss  
300  
100  
Coss  
20  
30  
10  
Crss  
–30  
10  
5
di / dt = 50 A / µs  
V
= 0, Ta = 25 °C  
GS  
–1  
Reverse Drain Current  
–0.1  
–0.3  
–3  
–10 –20  
(A)  
0
–10  
–20  
–40  
–50  
(V)  
I
DR  
Drain to Source Voltage  
V
DS  
Dynamic Input Characteristics  
Switching Characteristics  
1000  
0
–20  
–40  
–60  
0
V
= –10 V  
–25 V  
–50 V  
V
= –10 V, V  
= –30 V  
DD  
DD  
GS  
Pw = 5 µs, duty < 1 %  
I
= –7 A  
D
300  
100  
–4  
–8  
–12  
t
d(off)  
t
f
30  
10  
V
V
GS  
DS  
t
r
t
d(on)  
V
= –10 V  
–25 V  
DD  
–50 V  
–80  
–16  
–20  
3
1
–100  
0
32  
–0.1 –0.3  
–1  
–3  
–10 –20  
(A)  
D
8
16  
24  
40  
Drain Current  
I
Gate Charge Qg (nc)  
5

与2SJ528相关器件

型号 品牌 描述 获取价格 数据表
2SJ528(L) RENESAS 0.37ohm, POWER, FET, DPAK-3

获取价格

2SJ528(L)|2SJ528(S) ETC

获取价格

2SJ528(S) HITACHI Power Field-Effect Transistor, 0.37ohm, DPAK-3

获取价格

2SJ528(S) RENESAS 0.37ohm, POWER, FET, DPAK-3

获取价格

2SJ528L HITACHI Silicon P Channel MOS FET High Speed Power Switching

获取价格

2SJ528L RENESAS Silicon P Channel MOS FET

获取价格