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2SJ528(S) PDF预览

2SJ528(S)

更新时间: 2024-01-17 03:58:10
品牌 Logo 应用领域
日立 - HITACHI 开关电源开关
页数 文件大小 规格书
9页 55K
描述
Power Field-Effect Transistor, 0.37ohm, DPAK-3

2SJ528(S) 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:DPAK(S)针数:4
Reach Compliance Code:compliant风险等级:5.7
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2SJ528(S) 数据手册

 浏览型号2SJ528(S)的Datasheet PDF文件第1页浏览型号2SJ528(S)的Datasheet PDF文件第3页浏览型号2SJ528(S)的Datasheet PDF文件第4页浏览型号2SJ528(S)的Datasheet PDF文件第5页浏览型号2SJ528(S)的Datasheet PDF文件第6页浏览型号2SJ528(S)的Datasheet PDF文件第7页 
2SJ528(L),2SJ528(S)  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
–60  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
VGSS  
ID  
±20  
V
–7  
A
Note1  
Drain peak current  
ID(pulse)  
–28  
A
Body-drain diode reverse drain current IDR  
–7  
A
Note3  
Note3  
Avalenche current  
Avalenche energy  
Channel dissipation  
Channel temperature  
Storage temperature  
IAP  
–7  
A
EAR  
4.2  
mJ  
W
°C  
°C  
PchNote2  
20  
Tch  
150  
Tstg  
–55 to +150  
Note: 1. PW 10µs, duty cycle 1 %  
2. Value at Tc = 25°C  
3. Value at Tch = 25°C, Rg 50 Ω  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
V
Test Conditions  
ID = –10mA, VGS = 0  
IG = ±100µA, VDS = 0  
VDS = –60 V, VGS = 0  
VGS = ±16V, VDS = 0  
ID = –1mA, VDS = –10V  
ID = –4A, VGS = –10V Note4  
ID = –4A, VGS = –4V Note4  
ID = –4A, VDS = –10V Note4  
VDS = –10V  
Drain to source breakdown voltage V(BR)DSS  
Gate to source breakdown voltage V(BR)GSS  
–60  
±20  
V
Zero gate voltege drain current  
Gate to source leak current  
Gate to source cutoff voltage  
Static drain to source on state  
resistance  
IDSS  
–10  
±10  
–2.0  
0.22  
0.37  
µA  
µA  
V
IGSS  
VGS(off)  
RDS(on)  
RDS(on)  
|yfs|  
–1.0  
0.17  
0.24  
5.0  
400  
220  
75  
Forward transfer admittance  
Input capacitance  
3.0  
S
Ciss  
Coss  
Crss  
td(on)  
tr  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
VGS = 0  
f = 1MHz  
10  
VGS = –10V, ID = –4A  
RL = 7.5Ω  
Rise time  
40  
Turn-off delay time  
td(off)  
tf  
75  
Fall time  
65  
Body–drain diode forward voltage VDF  
–1.1  
65  
IF = –7A, VGS = 0  
Body–drain diode reverse  
recovery time  
trr  
ns  
IF = –7A, VGS = 0  
diF/ dt = 50A/µs  
Note: 4. Pulse test  
2

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