2SJ528(L),2SJ528(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
–60
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
ID
±20
V
–7
A
Note1
Drain peak current
ID(pulse)
–28
A
Body-drain diode reverse drain current IDR
–7
A
Note3
Note3
Avalenche current
Avalenche energy
Channel dissipation
Channel temperature
Storage temperature
IAP
–7
A
EAR
4.2
mJ
W
°C
°C
PchNote2
20
Tch
150
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –4A, VGS = –10V Note4
ID = –4A, VGS = –4V Note4
ID = –4A, VDS = –10V Note4
VDS = –10V
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
–60
±20
—
—
—
V
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
IDSS
—
–10
±10
–2.0
0.22
0.37
—
µA
µA
V
IGSS
—
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
–1.0
—
—
0.17
0.24
5.0
400
220
75
Ω
—
Ω
Forward transfer admittance
Input capacitance
3.0
—
S
Ciss
Coss
Crss
td(on)
tr
—
pF
pF
pF
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Turn-on delay time
—
—
VGS = 0
—
—
f = 1MHz
—
10
—
VGS = –10V, ID = –4A
RL = 7.5Ω
Rise time
—
40
—
Turn-off delay time
td(off)
tf
—
75
—
Fall time
—
65
—
Body–drain diode forward voltage VDF
—
–1.1
65
—
IF = –7A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
—
ns
IF = –7A, VGS = 0
diF/ dt = 50A/µs
Note: 4. Pulse test
2